PMID- 36849724
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20230228
LR  - 20230303
IS  - 2045-2322 (Electronic)
IS  - 2045-2322 (Linking)
VI  - 13
IP  - 1
DP  - 2023 Feb 27
TI  - Improvements in 2D p-type WSe(2) transistors towards ultimate CMOS scaling.
PG  - 3304
LID - 10.1038/s41598-023-30317-4 [doi]
LID - 3304
AB  - This paper provides comprehensive experimental analysis relating to improvements 
      in the two-dimensional (2D) p-type metal-oxide-semiconductor (PMOS) field effect 
      transistors (FETs) by pure van der Waals (vdW) contacts on few-layer tungsten 
      diselenide (WSe(2)) with high-k metal gate (HKMG) stacks. Our analysis shows that 
      standard metallization techniques (e.g., e-beam evaporation at moderate 
      pressure ~ 10(-5) torr) results in significant Fermi-level pinning, but Schottky 
      barrier heights (SBH) remain small (< 100 meV) when using high work function 
      metals (e.g., Pt or Pd). Temperature-dependent analysis uncovers a more dominant 
      contribution to contact resistance from the channel access region and confirms 
      significant improvement through less damaging metallization techniques (i.e., 
      reduced scattering) combined with strongly scaled HKMG stacks (enhanced carrier 
      density). A clean contact/channel interface is achieved through high-vacuum 
      evaporation and temperature-controlled stepped deposition providing large 
      improvements in contact resistance. Our study reports low contact resistance of 
      5.7 kOmega-microm, with on-state currents of ~ 97 microA/microm and subthreshold swing 
      of ~ 140 mV/dec in FETs with channel lengths of 400 nm. Furthermore, theoretical 
      analysis using a Landauer transport ballistic model for WSe(2) SB-FETs elucidates 
      the prospects of nanoscale 2D PMOS FETs indicating high-performance (excellent 
      on-state current vs subthreshold swing benchmarks) towards the ultimate CMOS 
      scaling limit.
CI  - (c) 2023. The Author(s).
FAU - Patoary, Naim Hossain
AU  - Patoary NH
AD  - Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ, 
      85281, USA.
FAU - Xie, Jing
AU  - Xie J
AD  - Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ, 
      85281, USA.
FAU - Zhou, Guantong
AU  - Zhou G
AD  - Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ, 
      85281, USA.
FAU - Al Mamun, Fahad
AU  - Al Mamun F
AD  - Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ, 
      85281, USA.
FAU - Sayyad, Mohammed
AU  - Sayyad M
AD  - Materials Science and Engineering, School for Engineering of Matter, Transport 
      and Energy, Arizona State University, Tempe, AZ, 85287, USA.
FAU - Tongay, Sefaattin
AU  - Tongay S
AUID- ORCID: 0000-0001-8294-984X
AD  - Materials Science and Engineering, School for Engineering of Matter, Transport 
      and Energy, Arizona State University, Tempe, AZ, 85287, USA.
FAU - Esqueda, Ivan Sanchez
AU  - Esqueda IS
AUID- ORCID: 0000-0001-6530-8602
AD  - Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ, 
      85281, USA. isesqueda@asu.edu.
LA  - eng
GR  - 2001107/National Science Foundation (NSF)/
GR  - 2052527/National Science Foundation (NSF)/
GR  - 2129412/National Science Foundation (NSF)/
PT  - Journal Article
DEP - 20230227
PL  - England
TA  - Sci Rep
JT  - Scientific reports
JID - 101563288
SB  - IM
PMC - PMC9971212
COIS- The authors declare no competing interests.
EDAT- 2023/03/01 06:00
MHDA- 2023/03/01 06:01
PMCR- 2023/02/27
CRDT- 2023/02/28 00:14
PHST- 2022/11/30 00:00 [received]
PHST- 2023/02/21 00:00 [accepted]
PHST- 2023/02/28 00:14 [entrez]
PHST- 2023/03/01 06:00 [pubmed]
PHST- 2023/03/01 06:01 [medline]
PHST- 2023/02/27 00:00 [pmc-release]
AID - 10.1038/s41598-023-30317-4 [pii]
AID - 30317 [pii]
AID - 10.1038/s41598-023-30317-4 [doi]
PST - epublish
SO  - Sci Rep. 2023 Feb 27;13(1):3304. doi: 10.1038/s41598-023-30317-4.