PMID- 36932269
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20230320
IS  - 2196-5404 (Electronic)
IS  - 2196-5404 (Linking)
VI  - 10
IP  - 1
DP  - 2023 Mar 17
TI  - Anisotropy of impact ionization in WSe(2) field effect transistors.
PG  - 13
LID - 10.1186/s40580-023-00361-x [doi]
LID - 13
AB  - Carrier multiplication via impact ionization in two-dimensional (2D) layered 
      materials is a very promising process for manufacturing high-performance devices 
      because the multiplication has been reported to overcome thermodynamic conversion 
      limits. Given that 2D layered materials exhibit highly anisotropic transport 
      properties, understanding the directionally-dependent multiplication process is 
      necessary for device applications. In this study, the anisotropy of carrier 
      multiplication in the 2D layered material, WSe(2), is investigated. To study the 
      multiplication anisotropy of WSe(2), both lateral and vertical WSe(2) field 
      effect transistors (FETs) are fabricated and their electrical and transport 
      properties are investigated. We find that the multiplication anisotropy is much 
      bigger than the transport anisotropy, i.e., the critical electric field (E(CR)) 
      for impact ionization of vertical WSe(2) FETs is approximately ten times higher 
      than that of lateral FETs. To understand the experimental results we calculate 
      the average energy of the carriers in the proposed devices under strong electric 
      fields by using the Monte Carlo simulation method. The calculated average energy 
      is strongly dependent on the transport directions and we find that the critical 
      electric field for impact ionization in vertical devices is approximately one 
      order of magnitude larger than that of the lateral devices, consistent with 
      experimental results. Our findings provide new strategies for the future 
      development of low-power electric and photoelectric devices.
CI  - (c) 2023. The Author(s).
FAU - Kang, Taeho
AU  - Kang T
AD  - SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, 
      Suwon, 16419, South Korea.
AD  - Department of Nano Science and Technology, Sungkyunkwan University, Suwon, 16419, 
      South Korea.
FAU - Choi, Haeju
AU  - Choi H
AD  - SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, 
      Suwon, 16419, South Korea.
AD  - Department of Nano Science and Technology, Sungkyunkwan University, Suwon, 16419, 
      South Korea.
FAU - Li, Jinshu
AU  - Li J
AD  - SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, 
      Suwon, 16419, South Korea.
AD  - Department of Nano Science and Technology, Sungkyunkwan University, Suwon, 16419, 
      South Korea.
FAU - Kang, Chanwoo
AU  - Kang C
AD  - SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, 
      Suwon, 16419, South Korea.
AD  - Department of Nano Science and Technology, Sungkyunkwan University, Suwon, 16419, 
      South Korea.
FAU - Hwang, Euyheon
AU  - Hwang E
AD  - SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, 
      Suwon, 16419, South Korea. euyheon@skku.edu.
AD  - Department of Nano Science and Technology, Sungkyunkwan University, Suwon, 16419, 
      South Korea. euyheon@skku.edu.
AD  - Department of Nano Engineering, Sungkyunkwan University, Suwon, 16419, South 
      Korea. euyheon@skku.edu.
FAU - Lee, Sungjoo
AU  - Lee S
AUID- ORCID: 0000-0003-1284-3593
AD  - SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, 
      Suwon, 16419, South Korea. leesj@skku.edu.
AD  - Department of Nano Science and Technology, Sungkyunkwan University, Suwon, 16419, 
      South Korea. leesj@skku.edu.
AD  - Department of Nano Engineering, Sungkyunkwan University, Suwon, 16419, South 
      Korea. leesj@skku.edu.
LA  - eng
GR  - 2022R1A2C3003068/National Research Foundation of Korea/
PT  - Journal Article
DEP - 20230317
PL  - England
TA  - Nano Converg
JT  - Nano convergence
JID - 101695675
PMC - PMC10023822
OTO - NOTNLM
OT  - 2D layered material
OT  - Carrier multiplication
OT  - Impact ionization
OT  - Steep switching
OT  - WSe2 field effect transistor
COIS- The authors declare that they have no competing interests.
EDAT- 2023/03/19 06:00
MHDA- 2023/03/19 06:01
PMCR- 2023/03/17
CRDT- 2023/03/18 00:27
PHST- 2022/12/14 00:00 [received]
PHST- 2023/02/15 00:00 [accepted]
PHST- 2023/03/18 00:27 [entrez]
PHST- 2023/03/19 06:00 [pubmed]
PHST- 2023/03/19 06:01 [medline]
PHST- 2023/03/17 00:00 [pmc-release]
AID - 10.1186/s40580-023-00361-x [pii]
AID - 361 [pii]
AID - 10.1186/s40580-023-00361-x [doi]
PST - epublish
SO  - Nano Converg. 2023 Mar 17;10(1):13. doi: 10.1186/s40580-023-00361-x.