PMID- 37010357 OWN - NLM STAT- PubMed-not-MEDLINE DCOM- 20230412 LR - 20230412 IS - 1530-6992 (Electronic) IS - 1530-6984 (Linking) VI - 23 IP - 7 DP - 2023 Apr 12 TI - Scaling of MoS(2) Transistors and Inverters to Sub-10 nm Channel Length with High Performance. PG - 2764-2770 LID - 10.1021/acs.nanolett.3c00031 [doi] AB - Two-dimensional (2D) semiconductors such as monolayer molybdenum disulfide (MoS(2)) are promising building blocks for ultrascaled field effect transistors (FETs), benefiting from their atomic thickness, dangling-bond-free flat surface, and excellent gate controllability. However, despite great prospects, the fabrication of 2D ultrashort channel FETs with high performance and uniformity remains a challenge. Here, we report a self-encapsulated heterostructure undercut technique for the fabrication of sub-10 nm channel length MoS(2) FETs. The fabricated 9 nm channel MoS(2) FETs exhibit superior performances compared with sub-15 nm channel length including the competitive on-state current density of 734/433 muA/mum at V(DS) = 2/1 V, record-low DIBL of approximately 50 mV/V, and superior on/off ratio of 3 x 10(7) and low subthreshold swing of approximately 100 mV/dec. Furthermore, the ultrashort channel MoS(2) FETs fabricated by this new technique show excellent homogeneity. Thanks to this, we scale the monolayer inverter down to sub-10 nm channel length. FAU - Tian, Jinpeng AU - Tian J AD - Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China. AD - School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China. FAU - Wang, Qinqin AU - Wang Q AD - Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China. AD - School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China. FAU - Huang, Xudan AU - Huang X AD - Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China. AD - School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China. FAU - Tang, Jian AU - Tang J AD - Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China. AD - School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China. FAU - Chu, Yanbang AU - Chu Y AD - Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China. AD - School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China. FAU - Wang, Shuopei AU - Wang S AD - Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China. AD - Songshan Lake Materials Laboratory, Dongguan 523808, China. FAU - Shen, Cheng AU - Shen C AD - Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China. AD - School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China. FAU - Zhao, Yancong AU - Zhao Y AD - Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China. AD - School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China. FAU - Li, Na AU - Li N AD - Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China. AD - Songshan Lake Materials Laboratory, Dongguan 523808, China. FAU - Liu, Jieying AU - Liu J AD - Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China. AD - School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China. FAU - Ji, Yiru AU - Ji Y AD - Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China. AD - School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China. FAU - Huang, Biying AU - Huang B AD - Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China. AD - School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China. FAU - Peng, Yalin AU - Peng Y AD - Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China. AD - School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China. FAU - Yang, Rong AU - Yang R AUID- ORCID: 0000-0001-5936-6849 AD - Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China. AD - Songshan Lake Materials Laboratory, Dongguan 523808, China. FAU - Yang, Wei AU - Yang W AUID- ORCID: 0000-0002-3925-0352 AD - Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China. AD - School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China. AD - Songshan Lake Materials Laboratory, Dongguan 523808, China. FAU - Watanabe, Kenji AU - Watanabe K AUID- ORCID: 0000-0003-3701-8119 AD - National Institute for Materials Science1-1 Namiki, Tsukuba 305-0044, Japan. FAU - Taniguchi, Takashi AU - Taniguchi T AUID- ORCID: 0000-0002-1467-3105 AD - National Institute for Materials Science1-1 Namiki, Tsukuba 305-0044, Japan. FAU - Bai, Xuedong AU - Bai X AUID- ORCID: 0000-0002-1403-491X AD - Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China. AD - School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China. FAU - Shi, Dongxia AU - Shi D AD - Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China. AD - School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China. FAU - Du, Luojun AU - Du L AD - Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China. AD - School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China. FAU - Zhang, Guangyu AU - Zhang G AUID- ORCID: 0000-0002-1833-7598 AD - Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China. AD - School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China. AD - Songshan Lake Materials Laboratory, Dongguan 523808, China. LA - eng PT - Journal Article DEP - 20230403 PL - United States TA - Nano Lett JT - Nano letters JID - 101088070 SB - IM OTO - NOTNLM OT - MoS2 OT - heterostructure undercut technique OT - inverter OT - sub-10 nm channel length OT - superior performances OT - ultrascaled transistor EDAT- 2023/04/04 06:00 MHDA- 2023/04/04 06:01 CRDT- 2023/04/03 09:32 PHST- 2023/04/04 06:01 [medline] PHST- 2023/04/04 06:00 [pubmed] PHST- 2023/04/03 09:32 [entrez] AID - 10.1021/acs.nanolett.3c00031 [doi] PST - ppublish SO - Nano Lett. 2023 Apr 12;23(7):2764-2770. doi: 10.1021/acs.nanolett.3c00031. Epub 2023 Apr 3.