PMID- 37016939
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20230412
LR  - 20230412
IS  - 1463-9084 (Electronic)
IS  - 1463-9076 (Linking)
VI  - 25
IP  - 15
DP  - 2023 Apr 12
TI  - Giant tunneling magnetoresistance in in-plane double-barrier magnetic tunnel 
      junctions based on MXene Cr(2)C.
PG  - 10991-10997
LID - 10.1039/d3cp00303e [doi]
AB  - The discovery of two-dimensional (2D) magnetic materials makes it possible to 
      realize in-plane magnetic tunnel junctions. In this study, the transport 
      characteristics of an in-plane double barrier magnetic tunnel junction (IDB-MTJ) 
      based on Cr(2)C have been studied by density functional theory combined with the 
      nonequilibrium Green's function method. The results showed its maximum tunneling 
      magnetoresistance ratio (TMR) value reached 6.58 x 10(10). Its minimum TMR value 
      (3.86 x 10(6)) was also comparable to those of conventional field effect 
      transistors (FETs). Due to its giant TMR and unique structural characteristics, 
      the IDB-MTJ based on Cr(2)C has great potential applications in magnetic random 
      access memory (MRAM) and logic computing.
FAU - Yu, Hailin
AU  - Yu H
AUID- ORCID: 0000-0003-0299-9623
AD  - School of Electronic and Information Engineering, Changshu Institute of 
      Technology, Changshu, 215500, China. ysliu@cslg.edu.cn.
FAU - Chen, Mingyan
AU  - Chen M
AD  - Hongzhiwei Technology (Shanghai) Co. Ltd., 1599 Xinjinqiao Road, Pudong, 
      Shanghai, China.
FAU - Shao, Zhenguang
AU  - Shao Z
AD  - School of Electronic and Information Engineering, Changshu Institute of 
      Technology, Changshu, 215500, China. ysliu@cslg.edu.cn.
FAU - Tao, Yongmei
AU  - Tao Y
AD  - School of Electronic and Information Engineering, Changshu Institute of 
      Technology, Changshu, 215500, China. ysliu@cslg.edu.cn.
FAU - Jiang, Xuefan
AU  - Jiang X
AD  - School of Electronic and Information Engineering, Changshu Institute of 
      Technology, Changshu, 215500, China. ysliu@cslg.edu.cn.
FAU - Dong, Yaojun
AU  - Dong Y
AD  - School of Electronic and Information Engineering, Changshu Institute of 
      Technology, Changshu, 215500, China. ysliu@cslg.edu.cn.
FAU - Zhang, Jie
AU  - Zhang J
AUID- ORCID: 0000-0003-2208-7066
AD  - School of Electronic and Information Engineering, Changshu Institute of 
      Technology, Changshu, 215500, China. ysliu@cslg.edu.cn.
FAU - Yang, Xifeng
AU  - Yang X
AD  - School of Electronic and Information Engineering, Changshu Institute of 
      Technology, Changshu, 215500, China. ysliu@cslg.edu.cn.
FAU - Liu, Yushen
AU  - Liu Y
AUID- ORCID: 0000-0002-5848-7670
AD  - School of Electronic and Information Engineering, Changshu Institute of 
      Technology, Changshu, 215500, China. ysliu@cslg.edu.cn.
LA  - eng
PT  - Journal Article
DEP - 20230412
PL  - England
TA  - Phys Chem Chem Phys
JT  - Physical chemistry chemical physics : PCCP
JID - 100888160
SB  - IM
EDAT- 2023/04/06 06:00
MHDA- 2023/04/06 06:01
CRDT- 2023/04/05 03:53
PHST- 2023/04/06 06:01 [medline]
PHST- 2023/04/06 06:00 [pubmed]
PHST- 2023/04/05 03:53 [entrez]
AID - 10.1039/d3cp00303e [doi]
PST - epublish
SO  - Phys Chem Chem Phys. 2023 Apr 12;25(15):10991-10997. doi: 10.1039/d3cp00303e.