PMID- 37022802
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20230420
LR  - 20230423
IS  - 1944-8252 (Electronic)
IS  - 1944-8244 (Print)
IS  - 1944-8244 (Linking)
VI  - 15
IP  - 15
DP  - 2023 Apr 19
TI  - Electron Transport Properties in High Electron Mobility Transistor Structures 
      Improved by V-Pit Formation on the AlGaN/GaN Interface.
PG  - 19646-19652
LID - 10.1021/acsami.3c00799 [doi]
AB  - This work suggests new morphology for the AlGaN/GaN interface which enhances 
      electron mobility in two-dimensional electron gas (2DEG) of high-electron 
      mobility transistor (HEMT) structures. The widely used technology for the 
      preparation of GaN channels in AlGaN/GaN HEMT transistors is growth at a high 
      temperature of around 1000  degrees C in an H(2) atmosphere. The main reason for these 
      conditions is the aim to prepare an atomically flat epitaxial surface for the 
      AlGaN/GaN interface and to achieve a layer with the lowest possible carbon 
      concentration. In this work, we show that a smooth AlGaN/GaN interface is not 
      necessary for high electron mobility in 2DEG. Surprisingly, when the 
      high-temperature GaN channel layer is replaced by the layer grown at a 
      temperature of 870  degrees C in an N(2) atmosphere using TEGa as a precursor, the 
      electron Hall mobility increases significantly. This unexpected behavior can be 
      explained by a spatial separation of electrons by V-pits from the regions 
      surrounding dislocation which contain increased concentration of point defects 
      and impurities.
FAU - Hospodkova, Alice
AU  - Hospodkova A
AUID- ORCID: 0000-0002-0053-1886
AD  - Institute of Physics CAS, v. v. i., Cukrovarnicka 10, 162 00 Prague 6, Czech 
      Republic.
FAU - Hajek, Frantisek
AU  - Hajek F
AD  - Institute of Physics CAS, v. v. i., Cukrovarnicka 10, 162 00 Prague 6, Czech 
      Republic.
AD  - Faculty of Nuclear Sciences and Physical Engineering, Czech Technical University 
      in Prague, Brehova 7, 11519 Prague 1, Czech Republic.
FAU - Hubacek, Tomas
AU  - Hubacek T
AD  - Institute of Physics CAS, v. v. i., Cukrovarnicka 10, 162 00 Prague 6, Czech 
      Republic.
FAU - Gedeonova, Zuzana
AU  - Gedeonova Z
AD  - Institute of Physics CAS, v. v. i., Cukrovarnicka 10, 162 00 Prague 6, Czech 
      Republic.
FAU - Hubik, Pavel
AU  - Hubik P
AD  - Institute of Physics CAS, v. v. i., Cukrovarnicka 10, 162 00 Prague 6, Czech 
      Republic.
FAU - Hyvl, Matej
AU  - Hyvl M
AUID- ORCID: 0000-0002-6805-7260
AD  - Institute of Physics CAS, v. v. i., Cukrovarnicka 10, 162 00 Prague 6, Czech 
      Republic.
FAU - Pangrac, Jiri
AU  - Pangrac J
AD  - Institute of Physics CAS, v. v. i., Cukrovarnicka 10, 162 00 Prague 6, Czech 
      Republic.
FAU - Dominec, Filip
AU  - Dominec F
AD  - Institute of Physics CAS, v. v. i., Cukrovarnicka 10, 162 00 Prague 6, Czech 
      Republic.
FAU - Kosutova, Tereza
AU  - Kosutova T
AD  - Institute of Physics CAS, v. v. i., Cukrovarnicka 10, 162 00 Prague 6, Czech 
      Republic.
AD  - Faculty of Mathematics and Physics, Charles University, Ke Karlovu 5, 121 16 
      Prague, Czech Republic.
LA  - eng
PT  - Journal Article
DEP - 20230406
PL  - United States
TA  - ACS Appl Mater Interfaces
JT  - ACS applied materials & interfaces
JID - 101504991
SB  - IM
PMC - PMC10119847
OTO - NOTNLM
OT  - AlGaN
OT  - GaN
OT  - HEMT
OT  - dislocations
OT  - electron mobility
OT  - metal-organic vapor phase epitaxy
COIS- The authors declare no competing financial interest.
EDAT- 2023/04/07 06:00
MHDA- 2023/04/07 06:01
PMCR- 2023/04/21
CRDT- 2023/04/06 12:13
PHST- 2023/04/07 06:01 [medline]
PHST- 2023/04/07 06:00 [pubmed]
PHST- 2023/04/06 12:13 [entrez]
PHST- 2023/04/21 00:00 [pmc-release]
AID - 10.1021/acsami.3c00799 [doi]
PST - ppublish
SO  - ACS Appl Mater Interfaces. 2023 Apr 19;15(15):19646-19652. doi: 
      10.1021/acsami.3c00799. Epub 2023 Apr 6.