PMID- 37115020
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20230510
LR  - 20230510
IS  - 1944-8252 (Electronic)
IS  - 1944-8244 (Linking)
VI  - 15
IP  - 18
DP  - 2023 May 10
TI  - Transducer-Aware Hydroxy-Rich-Surface Indium Oxide Gas Sensor for Low-Power and 
      High-Sensitivity NO(2) Gas Sensing.
PG  - 22651-22661
LID - 10.1021/acsami.3c00022 [doi]
AB  - Low-power metal oxide (MOX)-based gas sensors are widely applied in edge devices. 
      To reduce power consumption, nanostructured MOX-based sensors that detect gas at 
      low temperatures have been reported. However, the fabrication process of these 
      sensors is difficult for mass production, and these sensors are lack uniformity 
      and reliability. On the other hand, MOX film-based gas sensors have been 
      commercialized but operate at high temperatures and exhibit low sensitivity. 
      Herein, commercially advantageous highly sensitive, film-based indium oxide 
      sensors operating at low temperatures are reported. Ar and O(2) gases are 
      simultaneously injected during the sputtering process to form a 
      hydroxy-rich-surface In(2)O(3) film. Conventional indium oxide (In(2)O(3)) films 
      (A0) and hydroxy-rich indium oxide films (A1) are compared using several 
      analytical techniques. A1 exhibits a work function of 4.92 eV, larger than that 
      of A0 (4.42 eV). A1 exhibits a Debye length 3.7 times longer than that of A0. A1 
      is advantageous for gas sensing when using field effect transistors (FETs) and 
      resistors as transducers. Because of the hydroxy groups present on the surface of 
      A1, A1 can react with NO(2) gas at a lower temperature ( approximately 100  degrees C) than A0 (180 
       degrees C). Operando diffuse reflectance infrared Fourier transform spectrometry 
      (DRIFTS) shows that NO(2) gas is adsorbed to A1 as nitrite (NO(2)(-)) at 100  degrees C 
      and nitrite and nitrate (NO(3)(-)) at 200  degrees C. After NO(2) is adsorbed as nitrate, 
      the sensitivity of the A1 sensor decreases and its low-temperature operability is 
      compromised. On the other hand, when NO(2) is adsorbed only as nitrite, the 
      performance of the sensor is maintained. The reliable hydroxy-rich FET-type gas 
      sensor shows the best performance compared to that of the existing film-based 
      NO(2) gas sensors, with a 2460% response to 500 ppb NO(2) gas at a power 
      consumption of 1.03 mW.
FAU - Jung, Gyuweon
AU  - Jung G
AUID- ORCID: 0000-0003-0357-0933
AD  - Department of Electrical and Computer Engineering and Inter-university 
      Semiconductor Research Center, Seoul National University, Seoul 08826, Republic 
      of Korea.
FAU - Shin, Hunhee
AU  - Shin H
AD  - Department of Electrical and Computer Engineering and Inter-university 
      Semiconductor Research Center, Seoul National University, Seoul 08826, Republic 
      of Korea.
FAU - Jeon, Se Won
AU  - Jeon SW
AD  - School of Chemical and Biological Engineering, Institute of Chemical Processes, 
      Seoul National University, Seoul 08826, Republic of Korea.
FAU - Lim, Yong Hyun
AU  - Lim YH
AD  - School of Chemical and Biological Engineering, Institute of Chemical Processes, 
      Seoul National University, Seoul 08826, Republic of Korea.
FAU - Hong, Seongbin
AU  - Hong S
AUID- ORCID: 0000-0002-6719-7608
AD  - Department of Electrical and Computer Engineering and Inter-university 
      Semiconductor Research Center, Seoul National University, Seoul 08826, Republic 
      of Korea.
FAU - Kim, Do Heui
AU  - Kim DH
AUID- ORCID: 0000-0003-3870-1606
AD  - School of Chemical and Biological Engineering, Institute of Chemical Processes, 
      Seoul National University, Seoul 08826, Republic of Korea.
FAU - Lee, Jong-Ho
AU  - Lee JH
AUID- ORCID: 0000-0003-3559-9802
AD  - Department of Electrical and Computer Engineering and Inter-university 
      Semiconductor Research Center, Seoul National University, Seoul 08826, Republic 
      of Korea.
LA  - eng
PT  - Journal Article
DEP - 20230428
PL  - United States
TA  - ACS Appl Mater Interfaces
JT  - ACS applied materials & interfaces
JID - 101504991
SB  - IM
OTO - NOTNLM
OT  - FET-type gas sensor
OT  - RF sputtering
OT  - indium oxide
OT  - metal oxide
OT  - operando diffuse reflectance Fourier transform spectrometry (DRIFTS)
OT  - resistor-type gas sensor
EDAT- 2023/04/28 12:43
MHDA- 2023/04/28 12:44
CRDT- 2023/04/28 09:53
PHST- 2023/04/28 12:44 [medline]
PHST- 2023/04/28 12:43 [pubmed]
PHST- 2023/04/28 09:53 [entrez]
AID - 10.1021/acsami.3c00022 [doi]
PST - ppublish
SO  - ACS Appl Mater Interfaces. 2023 May 10;15(18):22651-22661. doi: 
      10.1021/acsami.3c00022. Epub 2023 Apr 28.