PMID- 37197184
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20230919
IS  - 2046-2069 (Electronic)
IS  - 2046-2069 (Linking)
VI  - 13
IP  - 22
DP  - 2023 May 15
TI  - Modulated wafer-scale WS(2) films based on atomic-layer-deposition for various 
      device applications.
PG  - 14841-14848
LID - 10.1039/d3ra00933e [doi]
AB  - Tungsten disulfide (WS(2)) is promising for potential applications in transistors 
      and gas sensors due to its high mobility and high adsorption of gas molecules 
      onto edge sites. This work comprehensively studied the deposition temperature, 
      growth mechanism, annealing conditions, and Nb doping of WS(2) to prepare 
      high-quality wafer-scale N- and P-type WS(2) films by atomic layer deposition 
      (ALD). It shows that the deposition and annealing temperature greatly influence 
      the electronic properties and crystallinity of WS(2), and insufficient annealing 
      will seriously reduce the switch ratio and on-state current of the field effect 
      transistors (FETs). Besides, the morphologies and carrier types of WS(2) films 
      can be controlled by adjusting the processes of ALD. The obtained WS(2) films and 
      the films with vertical structures were used to fabricate FETs and gas sensors, 
      respectively. Among them, the I(on)/I(off) ratio of N- and P-type WS(2) FETs is 
      10(5) and 10(2), respectively, and the response of N- and P-type gas sensors is 
      14% and 42% under 50 ppm NH(3) at room temperature, respectively. We have 
      successfully demonstrated a controllable ALD process to modify the morphology and 
      doping behavior of WS(2) films with various device functionalities based on 
      acquisitive characteristics.
CI  - This journal is (c) The Royal Society of Chemistry.
FAU - Guo, Xiangyu
AU  - Guo X
AD  - School of Microelectronics, Fudan University Shanghai 200433 China 
      hushen@fudan.edu.cn lji@fudan.edu.cn.
FAU - Yang, Hanjie
AU  - Yang H
AD  - School of Microelectronics, Fudan University Shanghai 200433 China 
      hushen@fudan.edu.cn lji@fudan.edu.cn.
FAU - Mo, Xichao
AU  - Mo X
AD  - School of Physical Science and Technology, Lanzhou University Lanzhou 730000 
      China.
FAU - Bai, Rongxu
AU  - Bai R
AD  - School of Microelectronics, Fudan University Shanghai 200433 China 
      hushen@fudan.edu.cn lji@fudan.edu.cn.
FAU - Wang, Yanrong
AU  - Wang Y
AUID- ORCID: 0000-0001-5136-9455
AD  - School of Physical Science and Technology, Lanzhou University Lanzhou 730000 
      China.
FAU - Han, Qi
AU  - Han Q
AD  - School of Microelectronics, Fudan University Shanghai 200433 China 
      hushen@fudan.edu.cn lji@fudan.edu.cn.
FAU - Han, Sheng
AU  - Han S
AD  - School of Microelectronics, Fudan University Shanghai 200433 China 
      hushen@fudan.edu.cn lji@fudan.edu.cn.
FAU - Sun, Qingqing
AU  - Sun Q
AD  - School of Microelectronics, Fudan University Shanghai 200433 China 
      hushen@fudan.edu.cn lji@fudan.edu.cn.
FAU - Zhang, David W
AU  - Zhang DW
AD  - School of Microelectronics, Fudan University Shanghai 200433 China 
      hushen@fudan.edu.cn lji@fudan.edu.cn.
FAU - Hu, Shen
AU  - Hu S
AUID- ORCID: 0000-0001-8162-1519
AD  - School of Microelectronics, Fudan University Shanghai 200433 China 
      hushen@fudan.edu.cn lji@fudan.edu.cn.
AD  - Jiashan Fudan Institute Jiashan 314100 China.
FAU - Ji, Li
AU  - Ji L
AD  - School of Microelectronics, Fudan University Shanghai 200433 China 
      hushen@fudan.edu.cn lji@fudan.edu.cn.
AD  - Hubei Yangtz Memory Laboratories Wuhan 430205 China.
LA  - eng
PT  - Journal Article
DEP - 20230515
PL  - England
TA  - RSC Adv
JT  - RSC advances
JID - 101581657
PMC - PMC10184003
COIS- There are no conflicts to declare.
EDAT- 2023/05/18 01:07
MHDA- 2023/05/18 01:08
PMCR- 2023/05/15
CRDT- 2023/05/17 19:57
PHST- 2023/02/11 00:00 [received]
PHST- 2023/05/09 00:00 [accepted]
PHST- 2023/05/18 01:08 [medline]
PHST- 2023/05/18 01:07 [pubmed]
PHST- 2023/05/17 19:57 [entrez]
PHST- 2023/05/15 00:00 [pmc-release]
AID - d3ra00933e [pii]
AID - 10.1039/d3ra00933e [doi]
PST - epublish
SO  - RSC Adv. 2023 May 15;13(22):14841-14848. doi: 10.1039/d3ra00933e. eCollection 
      2023 May 15.