PMID- 37242078
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20230529
IS  - 2079-4991 (Print)
IS  - 2079-4991 (Electronic)
IS  - 2079-4991 (Linking)
VI  - 13
IP  - 10
DP  - 2023 May 18
TI  - Development and Analysis of a Three-Fin Trigate Q-FinFET for a 3 nm Technology 
      Node with a Strained-Silicon Channel System.
LID - 10.3390/nano13101662 [doi]
LID - 1662
AB  - Multi-gate field effect transistors (FETs) such as FinFETs are severely affected 
      by short-channel effects (SCEs) below 14 nm technology nodes, with even taller 
      fins incurring fringing capacitances. This leads to performance degradation of 
      the devices, which inhibits further scaling of nanoFETs, deterring the progress 
      of semiconductor industries. Therefore, research has not kept pace with the 
      technological requirements of the International Roadmap for Devices and Systems 
      (IRDS). Thus, the development of newer devices with superior performances in 
      terms of higher ON currents, acceptable leakage currents and improved SCEs is 
      needed to enable the continuance of integrated circuit (IC) technologies. The 
      literature has advocated integration of strained-silicon technology in existing 
      FinFETs, which is highly effective in enhancing ON currents through the strain 
      effect. However, the ON currents can also be amplified by intensifying the number 
      of fins in trigate (TG) FinFETs. Thus, three-fin TG quantum (Q)-FinFETs, using a 
      novel tri-layered strained-silicon channel, are deployed here at 10 nm and 8 nm 
      channel lengths. Threshold voltage is calculated analytically to validate the 
      designs. The electrical parameters and quantum effects of both devices are 
      explored, analysed and compared with respect to existing 
      heterostructure-on-insulator (HOI) FinFETs and the proposed existing standard 
      requirement of IRDS 2022 for a 3 nm technology node. The comparisons demonstrated 
      a significant increase in the drive currents upon employing three fins of the 
      same dimensions (8 nm gate length) and specifications in a device-based system. 
      The performance is augmented in contrast to the 3 nm technology node device of 
      IRDS 2022, with SCEs within the limits. Thus, employing a tri-layered 
      strained-silicon channel system in each fin allowed for forming a three-fin 
      Q-FinFET that, in our opinion, is the technique for consolidating the performance 
      of the devices and enabling future generation device for faster switching 
      operation in a sub-nano regime.
FAU - Nanda, Swagat
AU  - Nanda S
AD  - Department of Electronics and Communication Engineering, National Institute of 
      Technology Mizoram, Chaltlang, Aizawl 796012, Mizoram, India.
FAU - Dhar, Rudra Sankar
AU  - Dhar RS
AUID- ORCID: 0000-0002-6571-3808
AD  - Department of Electronics and Communication Engineering, National Institute of 
      Technology Mizoram, Chaltlang, Aizawl 796012, Mizoram, India.
FAU - Awwad, Falah
AU  - Awwad F
AUID- ORCID: 0000-0001-6154-2143
AD  - Department of Electrical Engineering, United Arab Emirates University, Al Ain 
      P.O. Box 15551, United Arab Emirates.
FAU - Hussein, Mousa I
AU  - Hussein MI
AUID- ORCID: 0000-0003-2186-9883
AD  - Department of Electrical Engineering, United Arab Emirates University, Al Ain 
      P.O. Box 15551, United Arab Emirates.
LA  - eng
PT  - Journal Article
DEP - 20230518
PL  - Switzerland
TA  - Nanomaterials (Basel)
JT  - Nanomaterials (Basel, Switzerland)
JID - 101610216
PMC - PMC10221103
OTO - NOTNLM
OT  - TG Q-FinFET
OT  - ballistic effect
OT  - enhanced mobility
OT  - strained silicon
OT  - three-fin structure
COIS- The authors declare no conflict of interest.
EDAT- 2023/05/27 09:42
MHDA- 2023/05/27 09:43
PMCR- 2023/05/18
CRDT- 2023/05/27 01:26
PHST- 2023/04/02 00:00 [received]
PHST- 2023/04/29 00:00 [revised]
PHST- 2023/05/11 00:00 [accepted]
PHST- 2023/05/27 09:43 [medline]
PHST- 2023/05/27 09:42 [pubmed]
PHST- 2023/05/27 01:26 [entrez]
PHST- 2023/05/18 00:00 [pmc-release]
AID - nano13101662 [pii]
AID - nanomaterials-13-01662 [pii]
AID - 10.3390/nano13101662 [doi]
PST - epublish
SO  - Nanomaterials (Basel). 2023 May 18;13(10):1662. doi: 10.3390/nano13101662.