PMID- 37299677
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20230612
IS  - 2079-4991 (Print)
IS  - 2079-4991 (Electronic)
IS  - 2079-4991 (Linking)
VI  - 13
IP  - 11
DP  - 2023 May 31
TI  - Metal Contact Induced Unconventional Field Effect in Metallic Carbon Nanotubes.
LID - 10.3390/nano13111774 [doi]
LID - 1774
AB  - One-dimensional carbon nanotubes (CNTs) are promising for future nanoelectronics 
      and optoelectronics, and an understanding of electrical contacts is essential for 
      developing these technologies. Although significant efforts have been made in 
      this direction, the quantitative behavior of electrical contacts remains poorly 
      understood. Here, we investigate the effect of metal deformations on the gate 
      voltage dependence of the conductance of metallic armchair and zigzag CNT field 
      effect transistors (FETs). We employ density functional theory calculations of 
      deformed CNTs under metal contacts to demonstrate that the current-voltage 
      characteristics of the FET devices are qualitatively different from those 
      expected for metallic CNT. We predict that, in the case of armchair CNT, the 
      gate-voltage dependence of the conductance shows an ON/OFF ratio of about a 
      factor of two, nearly independent of temperature. We attribute the simulated 
      behavior to modification of the band structure under the metals caused by 
      deformation. Our comprehensive model predicts a distinct feature of conductance 
      modulation in armchair CNTFETs induced by the deformation of the CNT band 
      structure. At the same time, the deformation in zigzag metallic CNTs leads to a 
      band crossing but not to a bandgap opening.
FAU - Fedorov, Georgy
AU  - Fedorov G
AUID- ORCID: 0000-0002-5224-0474
AD  - Institute of Photonics, University of Eastern Finland, 999018 Joensuu, Finland.
FAU - Hafizi, Roohollah
AU  - Hafizi R
AUID- ORCID: 0000-0001-6513-4446
AD  - Department of Physics and Astronomy and Thomas Young Centre, University College 
      London, London WC1E 6BT, UK.
FAU - Semenenko, Vyacheslav
AU  - Semenenko V
AD  - Department of Electrical Engineering, University at Buffalo, The State University 
      of New York, Buffalo, NY 14260, USA.
FAU - Perebeinos, Vasili
AU  - Perebeinos V
AUID- ORCID: 0000-0002-0234-8188
AD  - Department of Electrical Engineering, University at Buffalo, The State University 
      of New York, Buffalo, NY 14260, USA.
LA  - eng
GR  - 2230727/National Science Foundation/
GR  - The a320166/Academy of Finland/
PT  - Journal Article
DEP - 20230531
PL  - Switzerland
TA  - Nanomaterials (Basel)
JT  - Nanomaterials (Basel, Switzerland)
JID - 101610216
PMC - PMC10254337
OTO - NOTNLM
OT  - ballistic transport
OT  - carbon nanotubes
OT  - electrical contact resistance
COIS- The authors declare no conflict of interest.
EDAT- 2023/06/10 15:13
MHDA- 2023/06/10 15:14
PMCR- 2023/05/31
CRDT- 2023/06/10 01:19
PHST- 2023/03/27 00:00 [received]
PHST- 2023/05/28 00:00 [revised]
PHST- 2023/05/29 00:00 [accepted]
PHST- 2023/06/10 15:14 [medline]
PHST- 2023/06/10 15:13 [pubmed]
PHST- 2023/06/10 01:19 [entrez]
PHST- 2023/05/31 00:00 [pmc-release]
AID - nano13111774 [pii]
AID - nanomaterials-13-01774 [pii]
AID - 10.3390/nano13111774 [doi]
PST - epublish
SO  - Nanomaterials (Basel). 2023 May 31;13(11):1774. doi: 10.3390/nano13111774.