PMID- 37399798
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20230720
IS  - 1361-6528 (Electronic)
IS  - 0957-4484 (Linking)
VI  - 34
IP  - 40
DP  - 2023 Jul 19
TI  - Wafer-scale striped network transistors based on purified semiconducting carbon 
      nanotubes for commercialization.
LID - 10.1088/1361-6528/ace36a [doi]
AB  - Highly purified and solution-processed semiconducting carbon nanotubes (s-CNTs) 
      have developed rapidly over the past several decades and are near-commercially 
      available materials that can replace silicon due to its large-area substrate 
      deposition and room-temperature processing compatibility. However, the more 
      s-CNTs are purified, the better their electrical performance, but considerable 
      effort and long centrifugation time are required, which can limit 
      commercialization due to high manufacturing costs. In this work, we therefore 
      fabricated 'striped' CNT network transistor across industry-standard 8 inch 
      wafers. The stripe-structured channel is effective in lowering the manufacturing 
      cost because it can maintain good device performance without requiring 
      high-purity s-CNTs. We evaluated the electrical performances and their uniformity 
      by demonstrating striped CNT network transistors fabricating from various s-CNT 
      solutions (e.g. 99%, 95%, and 90%) in 8 inch wafers. From our results, we 
      concluded that by optimizing the CNT network configurations, CNTs can be 
      sufficiently utilized for commercialization technology even at low semiconducting 
      purity. Our approach can serve as a critical foundation for future low-cost 
      commercial CNT electronics.
CI  - (c) 2023 IOP Publishing Ltd.
FAU - An, Yulim
AU  - An Y
AD  - School of Electrical Engineering, Kookmin University, Seoul 02707, Republic of 
      Korea.
FAU - Lee, Yongwoo
AU  - Lee Y
AUID- ORCID: 0000-0003-3224-1960
AD  - School of Electrical Engineering, Kookmin University, Seoul 02707, Republic of 
      Korea.
FAU - Kim, Dong-Myong
AU  - Kim DM
AD  - School of Electrical Engineering, Kookmin University, Seoul 02707, Republic of 
      Korea.
FAU - Kim, Dae Hwan
AU  - Kim DH
AD  - School of Electrical Engineering, Kookmin University, Seoul 02707, Republic of 
      Korea.
FAU - Bae, Jong-Ho
AU  - Bae JH
AD  - School of Electrical Engineering, Kookmin University, Seoul 02707, Republic of 
      Korea.
FAU - Kang, Min-Ho
AU  - Kang MH
AD  - Department of Nano-process, National Nanofab Center (NNFC), Daejeon 34141, 
      Republic of Korea.
FAU - Choi, Sung-Jin
AU  - Choi SJ
AUID- ORCID: 0000-0003-1301-2847
AD  - School of Electrical Engineering, Kookmin University, Seoul 02707, Republic of 
      Korea.
LA  - eng
PT  - Journal Article
DEP - 20230719
PL  - England
TA  - Nanotechnology
JT  - Nanotechnology
JID - 101241272
SB  - IM
OTO - NOTNLM
OT  - 8inch wafer
OT  - carbon nanotube
OT  - commercialization
OT  - low cost
OT  - network
OT  - stripe
EDAT- 2023/07/04 01:05
MHDA- 2023/07/04 01:06
CRDT- 2023/07/03 18:23
PHST- 2023/06/08 00:00 [received]
PHST- 2023/07/03 00:00 [accepted]
PHST- 2023/07/04 01:06 [medline]
PHST- 2023/07/04 01:05 [pubmed]
PHST- 2023/07/03 18:23 [entrez]
AID - 10.1088/1361-6528/ace36a [doi]
PST - epublish
SO  - Nanotechnology. 2023 Jul 19;34(40). doi: 10.1088/1361-6528/ace36a.