PMID- 37420998
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20230718
IS  - 2072-666X (Print)
IS  - 2072-666X (Electronic)
IS  - 2072-666X (Linking)
VI  - 14
IP  - 4
DP  - 2023 Mar 29
TI  - A Brief Overview of the Rapid Progress and Proposed Improvements in Gallium 
      Nitride Epitaxy and Process for Third-Generation Semiconductors with Wide 
      Bandgap.
LID - 10.3390/mi14040764 [doi]
LID - 764
AB  - In this paper, we will discuss the rapid progress of third-generation 
      semiconductors with wide bandgap, with a special focus on the gallium nitride 
      (GaN) on silicon (Si). This architecture has high mass-production potential due 
      to its low cost, larger size, and compatibility with CMOS-fab processes. As a 
      result, several improvements have been proposed in terms of epitaxy structure and 
      high electron mobility transistor (HEMT) process, particularly in the enhancement 
      mode (E-mode). IMEC has made significant strides using a 200 mm 8-inch Qromis 
      Substrate Technology (QST((R))) substrate for breakdown voltage to achieve 650 V in 
      2020, which was further improved to 1200 V by superlattice and carbon-doped in 
      2022. In 2016, IMEC adopted VEECO metal-organic chemical vapor deposition (MOCVD) 
      for GaN on Si HEMT epitaxy structure and the process by implementing a 
      three-layer field plate to improve dynamic on-resistance (R(ON)). In 2019, 
      Panasonic HD-GITs plus field version was utilized to effectively improve dynamic 
      R(ON). Both reliability and dynamic RON have been enhanced by these improvements.
FAU - Liu, An-Chen
AU  - Liu AC
AD  - Department of Photonics, Institute of Electro-Optical Engineering, College of 
      Electrical and Computer Engineering, National Yang Ming Chiao Tung University, 
      Hsinchu 30010, Taiwan.
FAU - Lai, Yung-Yu
AU  - Lai YY
AUID- ORCID: 0000-0002-2546-4093
AD  - Research Center for Applied Sciences, Academia Sinica, Taipei 114699, Taiwan.
FAU - Chen, Hsin-Chu
AU  - Chen HC
AD  - Institute of Advanced Semiconductor Packaging and Testing, College of 
      Semiconductor and Advanced Technology Research, National Sun Yat-sen University, 
      Kaohsiung 804201, Taiwan.
FAU - Chiu, An-Ping
AU  - Chiu AP
AD  - Semiconductor Research Center, Hon Hai Research Institute, Taipei 114699, Taiwan.
FAU - Kuo, Hao-Chung
AU  - Kuo HC
AUID- ORCID: 0000-0002-9373-4649
AD  - Department of Photonics, Institute of Electro-Optical Engineering, College of 
      Electrical and Computer Engineering, National Yang Ming Chiao Tung University, 
      Hsinchu 30010, Taiwan.
AD  - Semiconductor Research Center, Hon Hai Research Institute, Taipei 114699, Taiwan.
LA  - eng
PT  - Journal Article
PT  - Review
DEP - 20230329
PL  - Switzerland
TA  - Micromachines (Basel)
JT  - Micromachines
JID - 101640903
PMC - PMC10143529
OTO - NOTNLM
OT  - GaN on Si/SiC/QST
OT  - gallium nitride
OT  - high electron mobility transistor
COIS- The authors declare no conflict of interest.
EDAT- 2023/07/08 10:43
MHDA- 2023/07/08 10:44
PMCR- 2023/03/29
CRDT- 2023/07/08 01:12
PHST- 2023/03/07 00:00 [received]
PHST- 2023/03/24 00:00 [revised]
PHST- 2023/03/27 00:00 [accepted]
PHST- 2023/07/08 10:44 [medline]
PHST- 2023/07/08 10:43 [pubmed]
PHST- 2023/07/08 01:12 [entrez]
PHST- 2023/03/29 00:00 [pmc-release]
AID - mi14040764 [pii]
AID - micromachines-14-00764 [pii]
AID - 10.3390/mi14040764 [doi]
PST - epublish
SO  - Micromachines (Basel). 2023 Mar 29;14(4):764. doi: 10.3390/mi14040764.