PMID- 37430754 OWN - NLM STAT- PubMed-not-MEDLINE DCOM- 20230711 LR - 20230718 IS - 1424-8220 (Electronic) IS - 1424-8220 (Linking) VI - 23 IP - 10 DP - 2023 May 17 TI - X-band MMICs for a Low-Cost Radar Transmit/Receive Module in 250 nm GaN HEMT Technology. LID - 10.3390/s23104840 [doi] LID - 4840 AB - This paper describes Monolithic Microwave Integrated Circuits (MMICs) for an X-band radar transceiver front-end implemented in 0.25 mum GaN High Electron Mobility Transistor (HEMT) technology. Two versions of single pole double throw (SPDT) T/R switches are introduced to realize a fully GaN-based transmit/receive module (TRM), each of which achieves an insertion loss of 1.21 dB and 0.66 dB at 9 GHz, IP(1dB) higher than 46.3 dBm and 44.7 dBm, respectively. Therefore, it can substitute a lossy circulator and limiter used for a conventional GaAs receiver. A driving amplifier (DA), a high-power amplifier (HPA), and a robust low-noise amplifier (LNA) are also designed and verified for a low-cost X-band transmit-receive module (TRM). For the transmitting path, the implemented DA achieves a saturated output power (P(sat)) of 38.0 dBm and output 1-dB compression (OP(1dB)) of 25.84 dBm. The HPA reaches a P(sat) of 43.0 dBm and power-added efficiency (PAE) of 35.6%. For the receiving path, the fabricated LNA measures a small-signal gain of 34.9 dB and a noise figure of 2.56 dB, and it can endure higher than 38 dBm input power in the measurement. The presented GaN MMICs can be useful in implementing a cost-effective TRM for Active Electronically Scanned Array (AESA) radar systems at X-band. FAU - Lee, Hyeonseok AU - Lee H AUID- ORCID: 0000-0002-7884-5391 AD - Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea. FAU - Park, Hyeong-Geun AU - Park HG AD - Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea. FAU - Le, Van-Du AU - Le VD AD - Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea. FAU - Nguyen, Van-Phu AU - Nguyen VP AD - Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea. FAU - Song, Jeong-Moon AU - Song JM AD - Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea. FAU - Lee, Bok-Hyung AU - Lee BH AD - Yongin Research Institute, Hanwha Systems, Yongin-si 17121, Republic of Korea. FAU - Park, Jung-Dong AU - Park JD AUID- ORCID: 0000-0003-4733-2160 AD - Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea. LA - eng GR - No. C210042/This work was supported by a grant-in-aid of KRIT and HANWHA SYSTEMS through the Weapon Systems Parts Localization R&D program/ GR - N/A/A grant-in-aid of HANWHA SYSTEMS/ PT - Journal Article DEP - 20230517 PL - Switzerland TA - Sensors (Basel) JT - Sensors (Basel, Switzerland) JID - 101204366 SB - IM PMC - PMC10223916 OTO - NOTNLM OT - T/R switch OT - driving amplifier (DA) OT - gallium nitride (GaN) OT - high-power amplifier (HPA) OT - low-noise amplifier (LNA) OT - transceiver COIS- The authors declare no conflict of interest. The funders had no role in the design of the study; in the collection, analyses, or interpretation of data; in the writing of the manuscript, or in the decision to publish the results. EDAT- 2023/07/11 06:42 MHDA- 2023/07/11 06:43 PMCR- 2023/05/17 CRDT- 2023/07/11 01:02 PHST- 2023/04/18 00:00 [received] PHST- 2023/05/08 00:00 [revised] PHST- 2023/05/12 00:00 [accepted] PHST- 2023/07/11 06:43 [medline] PHST- 2023/07/11 06:42 [pubmed] PHST- 2023/07/11 01:02 [entrez] PHST- 2023/05/17 00:00 [pmc-release] AID - s23104840 [pii] AID - sensors-23-04840 [pii] AID - 10.3390/s23104840 [doi] PST - epublish SO - Sensors (Basel). 2023 May 17;23(10):4840. doi: 10.3390/s23104840.