PMID- 37514906
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20230731
IS  - 1424-8220 (Electronic)
IS  - 1424-8220 (Linking)
VI  - 23
IP  - 14
DP  - 2023 Jul 22
TI  - An MMIC LNA for Millimeter-Wave Radar and 5G Applications with GaN-on-SiC 
      Technology.
LID - 10.3390/s23146611 [doi]
LID - 6611
AB  - This paper presents a monolithic microwave integrated circuit (MMIC) low noise 
      amplifier (LNA) that is compatible with n257 (26.5-29.5 GHz) and n258 (24.25-27.5 
      GHz) frequency bands for fifth-generation mobile communications system (5G) and 
      millimeter-wave radar. The total circuit size of the LNA is 2.5 x 1.5 mm2. To 
      guarantee a trade-off between noise figure (NF) and small signal gain, the 
      transmission lines are connected to the source of gallium nitride (GaN)-on-SiC 
      high electron mobility transistors (HEMT) by analyzing the nonlinear small signal 
      equivalent circuit. A series of stability enhancement measures including source 
      degeneration, an RC series network, and RF choke are put forward to enhance the 
      stability of designed LNA. The designed GaN-based MMIC LNA adopts hybrid-matching 
      networks (MNs) with co-design strategy to realize low NF and broadband 
      characteristics across 5G n257 and n258 frequency band. Due to the different 
      priorities of these hybrid-MNs, distinguished design strategies are employed to 
      benefit small signal gain, input-output return loss, and NF performance. In order 
      to meet the testing conditions of MMIC, an impeccable system for measuring small 
      has been built to ensure the accuracy of the measured results. According to the 
      measured results for small signal, the three-stage MMIC LNA has a linear gain of 
      18.2-20.3 dB and an NF of 2.5-3.1 dB with an input-output return loss better than 
      10 dB in the whole n257 and n258 frequency bands.
FAU - Huang, Chaoyu
AU  - Huang C
AD  - School of Integrated Circuit, Guangdong University of Technology, Guangzhou 
      510006, China.
FAU - Zhang, Zhihao
AU  - Zhang Z
AUID- ORCID: 0000-0001-9357-6567
AD  - School of Integrated Circuit, Guangdong University of Technology, Guangzhou 
      510006, China.
FAU - Wang, Xinjie
AU  - Wang X
AD  - School of Integrated Circuit, Guangdong University of Technology, Guangzhou 
      510006, China.
AD  - School of Information Engineering, Guangdong University of Technology, Guangzhou 
      510006, China.
FAU - Liu, Hailiang
AU  - Liu H
AD  - School of Information Engineering, Guangdong University of Technology, Guangzhou 
      510006, China.
FAU - Zhang, Gary
AU  - Zhang G
AD  - School of Integrated Circuit, Guangdong University of Technology, Guangzhou 
      510006, China.
LA  - eng
GR  - Grant No. 61974035/The National Natural Science Foundation of China/
GR  - Grant No. 2017BT01X168/the Guangdong Local Inno. Research Team of Pearl River 
      Talent Program/
PT  - Journal Article
DEP - 20230722
PL  - Switzerland
TA  - Sensors (Basel)
JT  - Sensors (Basel, Switzerland)
JID - 101204366
SB  - IM
PMC - PMC10385661
OTO - NOTNLM
OT  - 5G
OT  - GaN HEMT
OT  - GaN-on-SiC
OT  - hybrid-MNs
OT  - low noise amplifier (LNA)
OT  - monolithic microwave integrated circuit (MMIC)
OT  - n257
OT  - n258
OT  - near distance senor (NDS)
OT  - stability handle
COIS- The authors declare no conflict of interest.
EDAT- 2023/07/29 11:51
MHDA- 2023/07/29 11:52
PMCR- 2023/07/22
CRDT- 2023/07/29 01:43
PHST- 2023/06/27 00:00 [received]
PHST- 2023/07/14 00:00 [revised]
PHST- 2023/07/20 00:00 [accepted]
PHST- 2023/07/29 11:52 [medline]
PHST- 2023/07/29 11:51 [pubmed]
PHST- 2023/07/29 01:43 [entrez]
PHST- 2023/07/22 00:00 [pmc-release]
AID - s23146611 [pii]
AID - sensors-23-06611 [pii]
AID - 10.3390/s23146611 [doi]
PST - epublish
SO  - Sensors (Basel). 2023 Jul 22;23(14):6611. doi: 10.3390/s23146611.