PMID- 37571591
OWN - NLM
STAT- MEDLINE
DCOM- 20230814
LR  - 20230815
IS  - 1424-8220 (Electronic)
IS  - 1424-8220 (Linking)
VI  - 23
IP  - 15
DP  - 2023 Jul 30
TI  - Application of Silicon Nanowire Field Effect Transistor (SiNW-FET) Biosensor with 
      High Sensitivity.
LID - 10.3390/s23156808 [doi]
LID - 6808
AB  - As a new type of one-dimensional semiconductor nanometer material, silicon 
      nanowires (SiNWs) possess good application prospects in the field of biomedical 
      sensing. SiNWs have excellent electronic properties for improving the detection 
      sensitivity of biosensors. The combination of SiNWs and field effect transistors 
      (FETs) formed one special biosensor with high sensitivity and target selectivity 
      in real-time and label-free. Recently, SiNW-FETs have received more attention in 
      fields of biomedical detection. Here, we give a critical review of the progress 
      of SiNW-FETs, in particular, about the reversible surface modification methods. 
      Moreover, we summarized the applications of SiNW-FETs in DNA, protein, and 
      microbial detection. We also discuss the related working principle and technical 
      approaches. Our review provides an extensive discussion for studying the 
      challenges in the future development of SiNW-FETs.
FAU - Li, Huiping
AU  - Li H
AD  - Ministry of Education Engineering Research Center of Smart Microsensors and 
      Microsystems, School of Electronic Information, Hangzhou Dianzi University, 
      Hangzhou 310018, China.
FAU - Li, Dujuan
AU  - Li D
AD  - Ministry of Education Engineering Research Center of Smart Microsensors and 
      Microsystems, School of Electronic Information, Hangzhou Dianzi University, 
      Hangzhou 310018, China.
FAU - Chen, Huiyi
AU  - Chen H
AD  - Ministry of Education Engineering Research Center of Smart Microsensors and 
      Microsystems, School of Electronic Information, Hangzhou Dianzi University, 
      Hangzhou 310018, China.
FAU - Yue, Xiaojie
AU  - Yue X
AD  - The Children's Hospital of Zhejiang University School of Medicine, Hangzhou 
      310052, China.
FAU - Fan, Kai
AU  - Fan K
AD  - School of Automation, Hangzhou Dianzi University, Hangzhou 310018, China.
FAU - Dong, Linxi
AU  - Dong L
AD  - Ministry of Education Engineering Research Center of Smart Microsensors and 
      Microsystems, School of Electronic Information, Hangzhou Dianzi University, 
      Hangzhou 310018, China.
FAU - Wang, Gaofeng
AU  - Wang G
AUID- ORCID: 0000-0001-8599-7249
AD  - Ministry of Education Engineering Research Center of Smart Microsensors and 
      Microsystems, School of Electronic Information, Hangzhou Dianzi University, 
      Hangzhou 310018, China.
LA  - eng
GR  - 61871167/National Natural Science Foundation of China/
GR  - 62141409/National Natural Science Foundation of China/
PT  - Journal Article
PT  - Review
DEP - 20230730
PL  - Switzerland
TA  - Sensors (Basel)
JT  - Sensors (Basel, Switzerland)
JID - 101204366
RN  - Z4152N8IUI (Silicon)
SB  - IM
MH  - Transistors, Electronic
MH  - Silicon
MH  - *Nanowires
MH  - Semiconductors
MH  - *Biosensing Techniques/methods
PMC - PMC10422280
OTO - NOTNLM
OT  - biomedical detection
OT  - biosensor
OT  - field effect transistors (FETs)
OT  - silicon nanowires (SiNWs)
OT  - surface modification
COIS- The authors declare no conflict of interest.
EDAT- 2023/08/12 10:45
MHDA- 2023/08/14 06:42
PMCR- 2023/07/30
CRDT- 2023/08/12 01:23
PHST- 2023/05/30 00:00 [received]
PHST- 2023/07/12 00:00 [revised]
PHST- 2023/07/25 00:00 [accepted]
PHST- 2023/08/14 06:42 [medline]
PHST- 2023/08/12 10:45 [pubmed]
PHST- 2023/08/12 01:23 [entrez]
PHST- 2023/07/30 00:00 [pmc-release]
AID - s23156808 [pii]
AID - sensors-23-06808 [pii]
AID - 10.3390/s23156808 [doi]
PST - epublish
SO  - Sensors (Basel). 2023 Jul 30;23(15):6808. doi: 10.3390/s23156808.