PMID- 37582036
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20230815
IS  - 1539-4794 (Electronic)
IS  - 0146-9592 (Linking)
VI  - 48
IP  - 16
DP  - 2023 Aug 15
TI  - Light-triggered 2D electron gas in a GaN-based HEMT with sandwiched p-GaN layers.
PG  - 4376-4379
LID - 10.1364/OL.499084 [doi]
AB  - In this work, a p-n junction-coupled metal-insulator-semiconductor (MIS) 
      normally-off high-electron-mobility transistor (HEMT) UVPD is proposed. A 
      two-dimensional electron gas (2DEG) at the AlN/U-GaN interface is entirely 
      depleted with a dark current of 1.97 x 10(-11) A because of the design of the 
      sandwiched p-GaN layers. Under 365 nm illumination, the 2DEG is light triggered 
      at V(ds) = 1 V with a high light on/off ratio of over 10(7) at a light power 
      density of 286.39 mW.cm(-2). Meanwhile, it exhibits fast rise and decay times of 
      248.39 and 584.79 micros, respectively. Moreover, a maximum responsivity (R) of 2.33 
      A/W, a maximum EQE of 793%, and a D* of 1.08 x 10(13) Jones are obtained at 
      V(ds) = 1 V. This can be attributed to the built-in electric fields in the 
      configuration, which accelerate the flow of photogenerated carriers into the 
      AlN/U-GaN channel. Additionally, the device showcases stable durability, 
      repeatability, and a low driving voltage, making it highly suitable for 
      applications in UV communication and space exploration.
FAU - Wang, Yu
AU  - Wang Y
FAU - Liu, Chuankai
AU  - Liu C
FAU - Qian, Hao
AU  - Qian H
FAU - Liu, Hangzan
AU  - Liu H
FAU - Han, Lixiang
AU  - Han L
FAU - Wang, Xiaozhou
AU  - Wang X
FAU - Gao, Wei
AU  - Gao W
FAU - Li, Jingbo
AU  - Li J
LA  - eng
PT  - Journal Article
PL  - United States
TA  - Opt Lett
JT  - Optics letters
JID - 7708433
SB  - IM
EDAT- 2023/08/15 18:41
MHDA- 2023/08/15 18:42
CRDT- 2023/08/15 12:43
PHST- 2023/08/15 18:42 [medline]
PHST- 2023/08/15 18:41 [pubmed]
PHST- 2023/08/15 12:43 [entrez]
AID - 536463 [pii]
AID - 10.1364/OL.499084 [doi]
PST - ppublish
SO  - Opt Lett. 2023 Aug 15;48(16):4376-4379. doi: 10.1364/OL.499084.