PMID- 37687728
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20230911
IS  - 1996-1944 (Print)
IS  - 1996-1944 (Electronic)
IS  - 1996-1944 (Linking)
VI  - 16
IP  - 17
DP  - 2023 Sep 2
TI  - Homogeneous Nanostructured VO(2)@SiO(2) as an Anti-Reflecting Layer in the 
      Visible/Near Infrared Wavelength.
LID - 10.3390/ma16176035 [doi]
LID - 6035
AB  - Low reflectivity is of great significance to photoelectric devices, optical 
      displays, solar cells, photocatalysis and other fields. In this paper, vanadium 
      oxide is deposited on pattern SiO(2) via atomic layer deposition and then 
      annealed to characterize and analyze the anti-reflection effect. Scanning 
      electron microscope (SEM) images indicate that the as-deposited VO(x) film has 
      the advantages of uniformity and controllability. After annealing treatment, the 
      VO(2)@pattern SiO(2) has fewer crevices compared with VO(2) on the accompanied 
      planar SiO(2) substrate. Raman results show that there is tiny homogeneous stress 
      in the VO(2) deposited on pattern SiO(2), which dilutes the shrinkage behavior of 
      the crystallization process. The optical reflection spectra indicate that the 
      as-deposited VO(x)@pattern SiO(2) has an anti-reflection effect due to the 
      combined mechanism of the trapping effect and the effective medium theory. After 
      annealing treatment, the weighted average reflectance diminished to 1.46% in the 
      visible near-infrared wavelength range of 650-1355 nm, in which the absolute 
      reflectance is less than 2%. Due to the multiple scattering effect caused by the 
      tiny cracks generated through annealing, the anti-reflection effect of 
      VO(2)@pattern SiO(2) is superior to that of VO(x)@pattern SiO(2). The ultra-low 
      reflection frequency domain amounts to 705 nm, and the lowest absolute 
      reflectance emerges at 1000 nm with an astonishing value of 0.86%. The prepared 
      anti-reflective materials have significant application prospects in the field of 
      intelligent optoelectronic devices due to the controllability of atomic layer 
      deposition (ALD) and phase transition characteristics of VO(2).
FAU - Wang, Shuxia
AU  - Wang S
AD  - School of Materials Science and Engineering, Zhengzhou University of Aeronautics, 
      Zhengzhou 450046, China.
FAU - He, Jiajun
AU  - He J
AD  - School of Materials Science and Engineering, Zhengzhou University of Aeronautics, 
      Zhengzhou 450046, China.
FAU - Sun, Panxu
AU  - Sun P
AUID- ORCID: 0000-0003-0051-5920
AD  - School of Civil Engineering, Zhengzhou University, Zhengzhou 450001, China.
LA  - eng
GR  - 222102230010/Henan province science and technology research funding project/
GR  - 22A560005/Key Research Projects of Henan Higher Education Institutions/
PT  - Journal Article
DEP - 20230902
PL  - Switzerland
TA  - Materials (Basel)
JT  - Materials (Basel, Switzerland)
JID - 101555929
PMC - PMC10488746
OTO - NOTNLM
OT  - homogeneous
OT  - low-reflecting
OT  - pattern SiO2
OT  - vanadium oxide
OT  - visible/near infrared
COIS- The authors declare no conflict of interest.
EDAT- 2023/09/09 11:45
MHDA- 2023/09/09 11:46
PMCR- 2023/09/02
CRDT- 2023/09/09 01:21
PHST- 2023/07/31 00:00 [received]
PHST- 2023/08/29 00:00 [revised]
PHST- 2023/08/30 00:00 [accepted]
PHST- 2023/09/09 11:46 [medline]
PHST- 2023/09/09 11:45 [pubmed]
PHST- 2023/09/09 01:21 [entrez]
PHST- 2023/09/02 00:00 [pmc-release]
AID - ma16176035 [pii]
AID - materials-16-06035 [pii]
AID - 10.3390/ma16176035 [doi]
PST - epublish
SO  - Materials (Basel). 2023 Sep 2;16(17):6035. doi: 10.3390/ma16176035.