PMID- 37738348
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20230925
IS  - 2375-2548 (Electronic)
IS  - 2375-2548 (Linking)
VI  - 9
IP  - 38
DP  - 2023 Sep 22
TI  - An artificial neuromuscular junction for enhanced reflexes and oculomotor 
      dynamics based on a ferroelectric CuInP(2)S(6)/GaN HEMT.
PG  - eadh9889
LID - 10.1126/sciadv.adh9889 [doi]
LID - eadh9889
AB  - A neuromuscular junction (NMJ) is a particularized synapse that activates muscle 
      fibers for macro-motions, requiring more energy than computation. Emulating the 
      NMJ is thus challenging owing to the need for both synaptic plasticity and high 
      driving power to trigger motions. Here, we present an artificial NMJ using 
      CuInP(2)S(6) (CIPS) as a gate dielectric integrated with an AlGaN/GaN-based 
      high-electron mobility transistor (HEMT). The ferroelectricity of the CIPS is 
      coupled with the two-dimensional electron gas channel in the HEMT, providing a 
      wide programmable current range of 6 picoampere per millimeter to 5 milliampere 
      per millimeter. The large output current window of the CIPS/GaN ferroelectric 
      HEMT (FeHEMT) allows for amplifier-less actuation, emulating the biological NMJ 
      functions of actuation and synaptic plasticity. We also demonstrate the emulation 
      of biological oculomotor dynamics, including in situ object tracking and enhanced 
      stimulus responses, using the fabricated artificial NMJ. We believe that the 
      CIPS/GaN FeHEMT offers a promising pathway for bioinspired robotics and 
      neuromorphic vision.
FAU - Park, Minseong
AU  - Park M
AUID- ORCID: 0000-0003-2923-1681
AD  - Department of Electrical and Computer Engineering, University of Virginia, 
      Charlottesville, VA 22904, USA.
FAU - Yang, Jeong Yong
AU  - Yang JY
AUID- ORCID: 0000-0002-8887-5295
AD  - School of Electronic Engineering, Soongsil University, Seoul 06938, South Korea.
FAU - Yeom, Min Jae
AU  - Yeom MJ
AD  - School of Electronic Engineering, Soongsil University, Seoul 06938, South Korea.
FAU - Bae, Byungjoon
AU  - Bae B
AUID- ORCID: 0000-0002-4305-3853
AD  - Department of Electrical and Computer Engineering, University of Virginia, 
      Charlottesville, VA 22904, USA.
FAU - Baek, Yongmin
AU  - Baek Y
AD  - Department of Electrical and Computer Engineering, University of Virginia, 
      Charlottesville, VA 22904, USA.
FAU - Yoo, Geonwook
AU  - Yoo G
AUID- ORCID: 0000-0002-7826-9005
AD  - School of Electronic Engineering, Soongsil University, Seoul 06938, South Korea.
AD  - Department of Intelligent Semiconductors, Soongsil University, Seoul 06978, South 
      Korea.
FAU - Lee, Kyusang
AU  - Lee K
AUID- ORCID: 0000-0001-7123-3395
AD  - Department of Electrical and Computer Engineering, University of Virginia, 
      Charlottesville, VA 22904, USA.
AD  - Department of Material Science and Engineering, University of Virginia, 
      Charlottesville, VA 22904, USA.
LA  - eng
PT  - Journal Article
DEP - 20230922
PL  - United States
TA  - Sci Adv
JT  - Science advances
JID - 101653440
SB  - IM
PMC - PMC10516496
EDAT- 2023/09/22 18:42
MHDA- 2023/09/22 18:43
PMCR- 2023/09/22
CRDT- 2023/09/22 14:04
PHST- 2023/09/22 18:43 [medline]
PHST- 2023/09/22 18:42 [pubmed]
PHST- 2023/09/22 14:04 [entrez]
PHST- 2023/09/22 00:00 [pmc-release]
AID - adh9889 [pii]
AID - 10.1126/sciadv.adh9889 [doi]
PST - ppublish
SO  - Sci Adv. 2023 Sep 22;9(38):eadh9889. doi: 10.1126/sciadv.adh9889. Epub 2023 Sep 
      22.