PMID- 37827524 OWN - NLM STAT- PubMed-not-MEDLINE LR - 20231101 IS - 1944-8252 (Electronic) IS - 1944-8244 (Linking) VI - 15 IP - 43 DP - 2023 Nov 1 TI - Mechanically Induced Anisotropic Fragments in Sn-Doped In(2)O(3) Nanoparticle Films for Flexible Strain Sensing Based on Surface Plasmons. PG - 50447-50456 LID - 10.1021/acsami.3c08862 [doi] AB - Recently, mechanical strain sensors have been extensively developed to quantify large mechanical deformations for stretchable and wearable applications. In this study, we propose a plasmonic strain sensor based on the mechanical control of optical properties using an assembled film comprising In(2)O(3): Sn nanoparticles (ITO NP film). The resonant reflectance in the infrared range could effectively be tuned by applying strain to the ITO NP film deposited on an elastomeric polydimethylsiloxane (PDMS) sheet. The change in reflectance was caused by the mechanical deformation of the PDMS sheet. The operating mechanism of the proposed plasmonic strain sensor was related to anisotropic fragments induced by cracks formed perpendicular to the direction of the applied strain. These anisotropic fragments were functionalized as optical modulators to change the reflectance depending on the applied strain. The sensing performance of the proposed plasmonic strain sensor was evaluated by using a PDMS sheet with a circular hole that produced nonuniform stress distributions. Finally, to evaluate the flexible and wearable performance of the proposed sensor, the optical detection of human motion was performed by detecting joint-related movements. The optical detection of human motion could be achieved because a change in motion (e.g., bending and stretching of the index finger) was reversibly associated with reflectance changes. Therefore, this study provides new insights into plasmon-based strain sensing for various applications in flexible instruments and human motion detection. FAU - Matsui, Hiroaki AU - Matsui H AUID- ORCID: 0000-0002-4557-1259 AD - Department of Bioengineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan. AD - Department of Electrical Engineering and Information systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan. FAU - Momose, Akira AU - Momose A AD - Kanagawa Institute of Industrial Science and Technology, 705-1, Shimoimaizumi, Ebina, Kanagawa 243-0435, Japan. FAU - Yoda, Hidehiko AU - Yoda H AD - Department of Electrical and Electronic Engineering, Utsunomiya University, 7-1-2, Yo̅to̅, Utsunomiya, Tochigi 321-8585, Japan. FAU - Fujita, Aki AU - Fujita A AD - Science & Technology Inst., Co., 3-5-4 Kojimachi, Chiyoda-ku, Tokyo 102-0083, Japan. LA - eng PT - Journal Article DEP - 20231012 PL - United States TA - ACS Appl Mater Interfaces JT - ACS applied materials & interfaces JID - 101504991 SB - IM OTO - NOTNLM OT - flexible sensor OT - mechanical strain OT - nanoparticle film OT - oxide semiconductor OT - plasmon EDAT- 2023/10/13 00:43 MHDA- 2023/10/13 00:44 CRDT- 2023/10/12 20:02 PHST- 2023/10/13 00:44 [medline] PHST- 2023/10/13 00:43 [pubmed] PHST- 2023/10/12 20:02 [entrez] AID - 10.1021/acsami.3c08862 [doi] PST - ppublish SO - ACS Appl Mater Interfaces. 2023 Nov 1;15(43):50447-50456. doi: 10.1021/acsami.3c08862. Epub 2023 Oct 12.