PMID- 37849204 OWN - NLM STAT- PubMed-not-MEDLINE LR - 20231020 IS - 2470-0053 (Electronic) IS - 2470-0045 (Linking) VI - 108 IP - 3-1 DP - 2023 Sep TI - Effect of CdSe/ZnS quantum dot dispersion on phase transitional behavior of 8OCB liquid crystal. PG - 034701 LID - 10.1103/PhysRevE.108.034701 [doi] AB - We report the effect on the phase transitional behavior of 8OCB liquid crystal (LC) doped with functionalized CdSe/ZnS quantum dots (QDs) in different concentrations. The temperature-dependent data of high-resolution optical birefringence and dielectric anisotropy are utilized to characterize the critical anomaly for both the isotropic-to-nematic (I-N) and nematic-to-smectic-A (N-SmA) phase transitions. The obtained results reveal that the order parameter exponent (beta) for the pure LC is found to be beta=0.249 and does not vary upon the inclusion of QDs in the pure matrix. It describes the weakly first-order characteristic of the I-N phase transition for all the studied samples, which falls within the limit of the tricritical hypothesis. Conversely, depending on the range of the N phase, we observed a nonuniversal nature of the specific heat capacity critical exponent (alpha;') linked with the N-SmA phase transition for all the studied samples. A relative comparison was made amongst the alpha;' values extracted from both the anisotropy data, and further, a theoretical relationship is established with these exponent values. The coupling strength among the N and SmA order parameters is determined using the optical birefringence data and discussed from the perspective of mutual interaction between the LC-QDs ligands. The results signify that a strong ligand-ligand interaction between neighboring QDs effectively reduces the N range and slightly influences the N-SmA phase transition. FAU - Rani, Aysha AU - Rani A AD - Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India. FAU - Chakraborty, Susanta AU - Chakraborty S AD - Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India. FAU - Sinha, Aloka AU - Sinha A AD - Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India. LA - eng PT - Journal Article PL - United States TA - Phys Rev E JT - Physical review. E JID - 101676019 SB - IM EDAT- 2023/10/18 06:42 MHDA- 2023/10/18 06:43 CRDT- 2023/10/18 01:07 PHST- 2023/03/23 00:00 [received] PHST- 2023/07/10 00:00 [accepted] PHST- 2023/10/18 06:43 [medline] PHST- 2023/10/18 06:42 [pubmed] PHST- 2023/10/18 01:07 [entrez] AID - 10.1103/PhysRevE.108.034701 [doi] PST - ppublish SO - Phys Rev E. 2023 Sep;108(3-1):034701. doi: 10.1103/PhysRevE.108.034701.