PMID- 37893358
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20231031
IS  - 2072-666X (Print)
IS  - 2072-666X (Electronic)
IS  - 2072-666X (Linking)
VI  - 14
IP  - 10
DP  - 2023 Oct 10
TI  - A 110-170 GHz Wideband LNA Design Using the InP Technology for Terahertz 
      Communication Applications.
LID - 10.3390/mi14101921 [doi]
LID - 1921
AB  - This paper proposes a low-noise amplifier (LNA) for terahertz communication 
      systems. The amplifier is designed based on 90 nm InP high-electron-mobility 
      transistor (HEMT) technology. In order to achieve high gain of LNA, the proposed 
      amplifier adopts a five-stage amplification structure. At the same time, the use 
      of staggered tuning technology has achieved a large bandwidth of terahertz 
      low-noise amplification. In addition, capacitors are used for interstage 
      isolation, sector lines are used for RF bypass, and Microstrip is used to design 
      matching circuits. The entire LNA circuit was validated using accurate 
      electromagnetic simulation. The simulation results show that at 140 GHz, the 
      small signal gain is 25 dB, the noise figure is 4.4 dB, the input 1 dB 
      compression point is -19 dBm, and the 3 dB bandwidth reaches 60 GHz (110-170 
      GHz), which validates the effectiveness of the design.
FAU - Hu, Lian
AU  - Hu L
AD  - School of Electronic Science and Engineering (National Exemplary School of 
      Microelectronics), University of Electronic Science and Technology of China, 
      Chengdu 610054, China.
AD  - Huzhou Key Laboratory of Terahertz Integrated Circuits and Systems, Yangtze Delta 
      Region Institute (Huzhou), University of Electronic Science and Technology of 
      China, Huzhou 313001, China.
FAU - Yang, Ziqiang
AU  - Yang Z
AD  - School of Electronic Science and Engineering (National Exemplary School of 
      Microelectronics), University of Electronic Science and Technology of China, 
      Chengdu 610054, China.
AD  - Huzhou Key Laboratory of Terahertz Integrated Circuits and Systems, Yangtze Delta 
      Region Institute (Huzhou), University of Electronic Science and Technology of 
      China, Huzhou 313001, China.
FAU - Fang, Yuan
AU  - Fang Y
AD  - The 13th Research Institute, CETC, Shijiazhuang 050051, China.
FAU - Li, Qingfeng
AU  - Li Q
AD  - School of Electronic Science and Engineering (National Exemplary School of 
      Microelectronics), University of Electronic Science and Technology of China, 
      Chengdu 610054, China.
AD  - Huzhou Key Laboratory of Terahertz Integrated Circuits and Systems, Yangtze Delta 
      Region Institute (Huzhou), University of Electronic Science and Technology of 
      China, Huzhou 313001, China.
FAU - Miao, Yixuan
AU  - Miao Y
AUID- ORCID: 0009-0002-3925-0798
AD  - School of Electronic Science and Engineering (National Exemplary School of 
      Microelectronics), University of Electronic Science and Technology of China, 
      Chengdu 610054, China.
FAU - Lu, Xiaofeng
AU  - Lu X
AD  - School of Electronic Science and Engineering (National Exemplary School of 
      Microelectronics), University of Electronic Science and Technology of China, 
      Chengdu 610054, China.
FAU - Sun, Xuechun
AU  - Sun X
AD  - School of Electronic Science and Engineering (National Exemplary School of 
      Microelectronics), University of Electronic Science and Technology of China, 
      Chengdu 610054, China.
FAU - Zhang, Yaxin
AU  - Zhang Y
AD  - School of Electronic Science and Engineering (National Exemplary School of 
      Microelectronics), University of Electronic Science and Technology of China, 
      Chengdu 610054, China.
LA  - eng
PT  - Journal Article
DEP - 20231010
PL  - Switzerland
TA  - Micromachines (Basel)
JT  - Micromachines
JID - 101640903
PMC - PMC10609183
OTO - NOTNLM
OT  - InP HEMT
OT  - LNA
OT  - high gain
OT  - terahertz
OT  - wideband
COIS- The authors declare no conflict interest.
EDAT- 2023/10/28 11:48
MHDA- 2023/10/28 11:49
PMCR- 2023/10/10
CRDT- 2023/10/28 01:09
PHST- 2023/07/31 00:00 [received]
PHST- 2023/09/02 00:00 [revised]
PHST- 2023/09/26 00:00 [accepted]
PHST- 2023/10/28 11:49 [medline]
PHST- 2023/10/28 11:48 [pubmed]
PHST- 2023/10/28 01:09 [entrez]
PHST- 2023/10/10 00:00 [pmc-release]
AID - mi14101921 [pii]
AID - micromachines-14-01921 [pii]
AID - 10.3390/mi14101921 [doi]
PST - epublish
SO  - Micromachines (Basel). 2023 Oct 10;14(10):1921. doi: 10.3390/mi14101921.