PMID- 37893385
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20231031
IS  - 2072-666X (Print)
IS  - 2072-666X (Electronic)
IS  - 2072-666X (Linking)
VI  - 14
IP  - 10
DP  - 2023 Oct 19
TI  - Simulation of Single-Event Transient Effect for GaN High-Electron-Mobility 
      Transistor.
LID - 10.3390/mi14101948 [doi]
LID - 1948
AB  - A GaN high-electron-mobility transistor (HEMT) was simulated using the 
      semiconductor simulation software Silvaco TCAD in this paper. By constructing a 
      two-dimensional structure of GaN HEMT, combined with key models such as carrier 
      mobility, the effects of a different state, different incidence position, 
      different drain voltage, different LET values, and a different incidence angle on 
      the single-event transient effect of GaN HEMT are simulated. LET stands for the 
      linear energy transfer capacity of a particle, which refers to the amount of 
      energy transferred by the particle to the irradiated substance on the unit path. 
      The simulation results show that for GaN HEMTs, the single-event transient effect 
      is more obvious when the device is in off-state than in on-state. The most 
      sensitive location of GaN HEMTs to the single-event effect is in the region near 
      the drain. The peak transient current increases with the increase in the drain 
      bias and incident ion LET values. The drain charge collection time increases with 
      the angle of incidence of heavy ion.
FAU - Wang, Zhiheng
AU  - Wang Z
AUID- ORCID: 0009-0003-6044-3102
AD  - School of Electronics & Mechanical Engineering, Xidian University, Xi'an 710071, 
      China.
AD  - State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School 
      of Microelectronics, Xidian University, Xi'an 710071, China.
FAU - Cao, Yanrong
AU  - Cao Y
AD  - School of Electronics & Mechanical Engineering, Xidian University, Xi'an 710071, 
      China.
AD  - State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School 
      of Microelectronics, Xidian University, Xi'an 710071, China.
FAU - Zhang, Xinxiang
AU  - Zhang X
AD  - School of Electronics & Mechanical Engineering, Xidian University, Xi'an 710071, 
      China.
AD  - State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School 
      of Microelectronics, Xidian University, Xi'an 710071, China.
FAU - Chen, Chuan
AU  - Chen C
AD  - School of Electronics & Mechanical Engineering, Xidian University, Xi'an 710071, 
      China.
AD  - State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School 
      of Microelectronics, Xidian University, Xi'an 710071, China.
FAU - Wu, Linshan
AU  - Wu L
AD  - School of Electronics & Mechanical Engineering, Xidian University, Xi'an 710071, 
      China.
AD  - State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School 
      of Microelectronics, Xidian University, Xi'an 710071, China.
FAU - Ma, Maodan
AU  - Ma M
AD  - School of Electronics & Mechanical Engineering, Xidian University, Xi'an 710071, 
      China.
AD  - State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School 
      of Microelectronics, Xidian University, Xi'an 710071, China.
FAU - Lv, Hanghang
AU  - Lv H
AD  - School of Electronics & Mechanical Engineering, Xidian University, Xi'an 710071, 
      China.
AD  - State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School 
      of Microelectronics, Xidian University, Xi'an 710071, China.
FAU - Lv, Ling
AU  - Lv L
AD  - State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School 
      of Microelectronics, Xidian University, Xi'an 710071, China.
FAU - Zheng, Xuefeng
AU  - Zheng X
AD  - State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School 
      of Microelectronics, Xidian University, Xi'an 710071, China.
FAU - Tian, Wenchao
AU  - Tian W
AD  - School of Electronics & Mechanical Engineering, Xidian University, Xi'an 710071, 
      China.
FAU - Ma, Xiaohua
AU  - Ma X
AD  - State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School 
      of Microelectronics, Xidian University, Xi'an 710071, China.
FAU - Hao, Yue
AU  - Hao Y
AD  - State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School 
      of Microelectronics, Xidian University, Xi'an 710071, China.
LA  - eng
GR  - 62374124, 62234013, 12035019/National Natural Science Foundation of China/
GR  - 2022YFB4400400/National Key R&D Program of China/
GR  - CQIRI-2022CXY-Y10/Cooperation Program of XDU-Chongqing IC Innovation Research 
      Institute/
GR  - 2022-JM-386/Natural Science Foundation of Shaanxi Province/
PT  - Journal Article
DEP - 20231019
PL  - Switzerland
TA  - Micromachines (Basel)
JT  - Micromachines
JID - 101640903
PMC - PMC10609171
OTO - NOTNLM
OT  - GaN HEMTs
OT  - charge collection
OT  - single-event transient effects
COIS- The authors declare no conflict of interest.
EDAT- 2023/10/28 11:43
MHDA- 2023/10/28 11:44
PMCR- 2023/10/19
CRDT- 2023/10/28 01:09
PHST- 2023/09/11 00:00 [received]
PHST- 2023/10/13 00:00 [revised]
PHST- 2023/10/17 00:00 [accepted]
PHST- 2023/10/28 11:44 [medline]
PHST- 2023/10/28 11:43 [pubmed]
PHST- 2023/10/28 01:09 [entrez]
PHST- 2023/10/19 00:00 [pmc-release]
AID - mi14101948 [pii]
AID - micromachines-14-01948 [pii]
AID - 10.3390/mi14101948 [doi]
PST - epublish
SO  - Micromachines (Basel). 2023 Oct 19;14(10):1948. doi: 10.3390/mi14101948.