PMID- 37899295
OWN - NLM
STAT- Publisher
LR  - 20231029
IS  - 1613-6829 (Electronic)
IS  - 1613-6810 (Linking)
DP  - 2023 Oct 29
TI  - Negative Capacitance Field Effect Transistors based on Van der Waals 2D 
      Materials.
PG  - e2304445
LID - 10.1002/smll.202304445 [doi]
AB  - Steep subthreshold swing (SS) is a decisive index for low energy consumption 
      devices. However, the SS of conventional field effect transistors (FETs) has 
      suffered from Boltzmann Tyranny, which limits the scaling of SS to 
      sub-60 mV dec(-1) at room temperature. Ferroelectric gate stack with negative 
      capacitance (NC) is proved to reduce the SS effectively by the amplification of 
      the gate voltage. With the application of 2D ferroelectric materials, the NC FETs 
      can be further improved in performance and downscaled to a smaller dimension as 
      well. This review introduces some related concepts for in-depth understanding of 
      NC FETs, including the NC, internal gate voltage, SS, negative drain-induced 
      barrier lowering, negative differential resistance, single-domain state, and 
      multi-domain state. Meanwhile, this work summarizes the recent advances of the 2D 
      NC FETs. Moreover, the electrical characteristics of some high-performance NC 
      FETs are expressed as well. The factors which affect the performance of the 2D NC 
      FETs are also presented in this paper. Finally, this work gives a brief summary 
      and outlook for the 2D NC FETs.
CI  - (c) 2023 Wiley-VCH GmbH.
FAU - Chen, Ruo-Si
AU  - Chen RS
AD  - School of Engineering, College of Engineering, Computing & Cybernetics, 
      Australian National University, Canberra, ACT, 2602, Australia.
FAU - Lu, Yuerui
AU  - Lu Y
AUID- ORCID: 0000-0001-6131-3906
AD  - School of Engineering, College of Engineering, Computing & Cybernetics, 
      Australian National University, Canberra, ACT, 2602, Australia.
LA  - eng
GR  - DP220102219/Australian Research Council/
GR  - LE200100032/Australian Research Council/
GR  - CE170100012/ARC Centre of Excellence in Quantum Computation and Communication 
      Technology/
PT  - Journal Article
PT  - Review
DEP - 20231029
PL  - Germany
TA  - Small
JT  - Small (Weinheim an der Bergstrasse, Germany)
JID - 101235338
SB  - IM
OTO - NOTNLM
OT  - 2D NC FETs
OT  - 2D ferroelectric materials
OT  - ferroelectric gate stack
OT  - negative capacitance
OT  - subthreshold swing
EDAT- 2023/10/30 00:41
MHDA- 2023/10/30 00:41
CRDT- 2023/10/29 23:02
PHST- 2023/09/20 00:00 [revised]
PHST- 2023/05/27 00:00 [received]
PHST- 2023/10/30 00:41 [medline]
PHST- 2023/10/30 00:41 [pubmed]
PHST- 2023/10/29 23:02 [entrez]
AID - 10.1002/smll.202304445 [doi]
PST - aheadofprint
SO  - Small. 2023 Oct 29:e2304445. doi: 10.1002/smll.202304445.