PMID- 37942456
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20231110
IS  - 2046-2069 (Electronic)
IS  - 2046-2069 (Linking)
VI  - 13
IP  - 46
DP  - 2023 Oct 31
TI  - Computational-fitting method for mobility extraction in GaN HEMT.
PG  - 32694-32698
LID - 10.1039/d3ra06630d [doi]
AB  - The third-generation semiconductor gallium nitride (GaN) has drawn wide attention 
      due to its high electron mobility property. However, the classical mobility 
      calculation methods such as Hall effect and transfer length method have 
      limitations in accurately extracting the mobility of GaN High Electron Mobility 
      Transistor (HEMT) due to their inability to consider the resistance in non-gate 
      region or their high fabrication costs. This work proposes an effective yet 
      accurate computational-fitting method for extracting the mobility of GaN HEMT. 
      The method consists of measuring the total resistance between source and drain at 
      different gate voltages over a very small range of overdrive voltage variations, 
      when the sum of the transconductance and capacitance of the device is regarded as 
      constants, and fitting a unique function of the total resistance with respect to 
      the overdrive voltage to determine the carrier mobility and the non-gate 
      resistance. The feasibility and reliability of the method has been also verified.
CI  - This journal is (c) The Royal Society of Chemistry.
FAU - Chang, Kuan-Chang
AU  - Chang KC
AUID- ORCID: 0000-0001-5056-0047
AD  - School of Electronic and Computer Engineering, Peking University Shenzhen 
      Graduate School Shenzhen 518055 China lilei@pkusz.edu.cn.
FAU - Feng, Xibei
AU  - Feng X
AD  - School of Electronic and Computer Engineering, Peking University Shenzhen 
      Graduate School Shenzhen 518055 China lilei@pkusz.edu.cn.
FAU - Liu, Huangbai
AU  - Liu H
AD  - School of Electronic and Computer Engineering, Peking University Shenzhen 
      Graduate School Shenzhen 518055 China lilei@pkusz.edu.cn.
FAU - Liu, Kai
AU  - Liu K
AD  - School of Electronic and Computer Engineering, Peking University Shenzhen 
      Graduate School Shenzhen 518055 China lilei@pkusz.edu.cn.
FAU - Lin, Xinnan
AU  - Lin X
AD  - School of Integrated Circuits, Anhui Polytechnic University Anhui 241060 China 
      xnlin@mail.ahpu.edu.cn.
FAU - Li, Lei
AU  - Li L
AUID- ORCID: 0000-0003-2172-0800
AD  - School of Electronic and Computer Engineering, Peking University Shenzhen 
      Graduate School Shenzhen 518055 China lilei@pkusz.edu.cn.
LA  - eng
PT  - Journal Article
DEP - 20231107
PL  - England
TA  - RSC Adv
JT  - RSC advances
JID - 101581657
PMC - PMC10628775
COIS- There are no conflicts to declare.
EDAT- 2023/11/09 06:42
MHDA- 2023/11/09 06:43
PMCR- 2023/11/07
CRDT- 2023/11/09 04:29
PHST- 2023/09/28 00:00 [received]
PHST- 2023/10/27 00:00 [accepted]
PHST- 2023/11/09 06:43 [medline]
PHST- 2023/11/09 06:42 [pubmed]
PHST- 2023/11/09 04:29 [entrez]
PHST- 2023/11/07 00:00 [pmc-release]
AID - d3ra06630d [pii]
AID - 10.1039/d3ra06630d [doi]
PST - epublish
SO  - RSC Adv. 2023 Nov 7;13(46):32694-32698. doi: 10.1039/d3ra06630d. eCollection 2023 
      Oct 31.