PMID- 38056009
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20231215
IS  - 1361-648X (Electronic)
IS  - 0953-8984 (Linking)
VI  - 36
IP  - 12
DP  - 2023 Dec 15
TI  - The interfacial properties of 2D metal-monolayer blue phosphorene heterojunctions 
      and transport properties of their field-effect transistors.
LID - 10.1088/1361-648X/ad12ff [doi]
AB  - Monolayer blue phosphorene (BlueP) has attracted much interest as a potential 
      channel material in electronic devices. Searching for suitable two-dimensional 
      (2D) metal materials to use as electrodes is critical to fabricating 
      high-performance nanoscale channel BlueP-based field effect transistors (FETs). 
      In this paper, we adopted first-principles calculations to explore binding 
      energies, phonon calculations and electronic structures of 2D metal-BlueP 
      heterojunctions, including Ti(3)C(2)-, NbTe(2)-, Ga(110)- and NbS(2)-BlueP, and 
      thermal stability of Ti(3)C(2)-BlueP heterojunction at room temperature. We also 
      used density functional theory coupled with the nonequilibrium Green function 
      method to investigate the transport properties of sub-5 nm BlueP-based FETs with 
      Ti(3)C(2)-BlueP electrodes. Our calculated results indicate that Ti(3)C(2)-BlueP 
      has excellent thermal stability and may be used as a candidate electrode material 
      for BlueP-based FETs. The double-gate can more effectively improve the device 
      performance compared with the single-gate. The estimated source leakage current 
      of sub-5 nm transistors reaches up to 369microA microm(-1), which is expected to meet the 
      requirements of the international technology roadmap for semiconductors for LP 
      (low-power) devices. Our results imply that 2D Ti(3)C(2)may act as an appropriate 
      electrode material for LP BlueP-based FETs, thus providing guidance for the 
      design of future short-gate-length BlueP-based FETs.
CI  - (c) 2023 IOP Publishing Ltd.
FAU - Chen, Weiling
AU  - Chen W
AD  - Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy 
      Materials, College of Physics and Energy, Fujian Normal University, Fuzhou 
      350117, People's Republic of China.
FAU - Lin, Xian
AU  - Lin X
AD  - Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy 
      Materials, College of Physics and Energy, Fujian Normal University, Fuzhou 
      350117, People's Republic of China.
FAU - Xu, Guigui
AU  - Xu G
AD  - Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy 
      Materials, College of Physics and Energy, Fujian Normal University, Fuzhou 
      350117, People's Republic of China.
AD  - Concord University College, Fujian Normal University, Fuzhou 350117, People's 
      Republic of China.
FAU - Zhong, Kehua
AU  - Zhong K
AUID- ORCID: 0000-0002-0857-1583
AD  - Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy 
      Materials, College of Physics and Energy, Fujian Normal University, Fuzhou 
      350117, People's Republic of China.
AD  - Fujian Provincial Collaborative Innovation Center for Advanced High-Field 
      Superconducting Materials and Engineering, Xiamen 350117, People's Republic of 
      China.
FAU - Zhang, Jian-Min
AU  - Zhang JM
AUID- ORCID: 0000-0002-0356-5387
AD  - Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy 
      Materials, College of Physics and Energy, Fujian Normal University, Fuzhou 
      350117, People's Republic of China.
AD  - Fujian Provincial Collaborative Innovation Center for Advanced High-Field 
      Superconducting Materials and Engineering, Xiamen 350117, People's Republic of 
      China.
FAU - Huang, Zhigao
AU  - Huang Z
AD  - Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy 
      Materials, College of Physics and Energy, Fujian Normal University, Fuzhou 
      350117, People's Republic of China.
AD  - Fujian Provincial Collaborative Innovation Center for Advanced High-Field 
      Superconducting Materials and Engineering, Xiamen 350117, People's Republic of 
      China.
LA  - eng
PT  - Journal Article
DEP - 20231215
PL  - England
TA  - J Phys Condens Matter
JT  - Journal of physics. Condensed matter : an Institute of Physics journal
JID - 101165248
SB  - IM
OTO - NOTNLM
OT  - blue phosphorene
OT  - field effect transistor
OT  - first-principles calculations
OT  - transport property
OT  - two-dimensional electrode
EDAT- 2023/12/06 18:42
MHDA- 2023/12/06 18:43
CRDT- 2023/12/06 17:44
PHST- 2023/09/04 00:00 [received]
PHST- 2023/12/06 00:00 [accepted]
PHST- 2023/12/06 18:43 [medline]
PHST- 2023/12/06 18:42 [pubmed]
PHST- 2023/12/06 17:44 [entrez]
AID - 10.1088/1361-648X/ad12ff [doi]
PST - epublish
SO  - J Phys Condens Matter. 2023 Dec 15;36(12). doi: 10.1088/1361-648X/ad12ff.