PMID- 38086659
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20240102
IS  - 1477-9234 (Electronic)
IS  - 1477-9226 (Linking)
VI  - 53
IP  - 2
DP  - 2024 Jan 2
TI  - Critical role of dopant in NiO(x) hole transport layer for mitigating redox 
      reactivity at NiO(x)/absorber interface in mixed cation perovskite solar cells.
PG  - 781-797
LID - 10.1039/d3dt03012a [doi]
AB  - Redox chemistry transpiring at the interface of NiO(x) hole transport layer (HTL) 
      and perovskite absorber is a critical phenomenon leading to relatively low values 
      of open circuit voltage (V(OC)) and fill factor (FF), in turn hampering the 
      overall device performance and stability. In this work, for the first time, the 
      hard acid electronic nature of vanadium (V) dopant in nickel oxide HTL is 
      opportunely exploited to mitigate the undesirable Lewis acid-base reactions 
      occurring at the HTL/mixed-cation perovskite interface. The findings of the study 
      show that vanadium doping results in improved interfacial energetics along with 
      decreased V(OC) loss, confirming that despite the increase in Ni(3+)/Ni(2+) ratio 
      with the vanadium dopant, the redox reaction catalyzed by Ni(3+) ions is kept 
      under check. Vanadium doping also aided in the realization of superior perovskite 
      films with lower Urbach energy, which translated into one order increase in 
      maximum photoinduced carrier generation rate per unit volume. Carrier dynamics 
      investigations show fewer defect states (lower V(TFL)) and trap-assisted 
      recombination (lower diode ideality factor), which optimize the devices' 
      photovoltaic performance. These benefits collectively contribute to low-loss 
      charge transfer across the NiO(x)/mixed-cation perovskite interface, which 
      increases the relative efficiency by  approximately 30% for 5 wt% V-doped NiO(x) devices 
      compared to pristine NiO(x) devices, augmented by an increase in device J-V 
      parameters like open circuit voltage (V(OC)), short circuit current density 
      (J(SC)), and fill factor (FF).
FAU - Sudhakaran Menon, Vidya
AU  - Sudhakaran Menon V
AUID- ORCID: 0000-0002-7368-1500
AD  - Organic and Perovskite Photovoltaics Laboratory (OPPV), Department of Chemistry, 
      SRM Institute of Science and Technology, Kattankulathur, Tamil Nadu, 603203, 
      India. ananthak@srmist.edu.in.
FAU - Ganesan, Saraswathi
AU  - Ganesan S
AUID- ORCID: 0000-0002-2335-2143
AD  - Organic and Perovskite Photovoltaics Laboratory (OPPV), Department of Chemistry, 
      SRM Institute of Science and Technology, Kattankulathur, Tamil Nadu, 603203, 
      India. ananthak@srmist.edu.in.
FAU - Raman, Rohith Kumar
AU  - Raman RK
AUID- ORCID: 0000-0003-2965-4684
AD  - Department of Physics and Nanotechnology, SRM Institute of Science and 
      Technology, Kattankulathur, Tamil Nadu, 603203, India.
FAU - Alagumalai, Ananthan
AU  - Alagumalai A
AUID- ORCID: 0000-0002-8308-0864
AD  - Organic and Perovskite Photovoltaics Laboratory (OPPV), Department of Chemistry, 
      SRM Institute of Science and Technology, Kattankulathur, Tamil Nadu, 603203, 
      India. ananthak@srmist.edu.in.
FAU - Krishnamoorthy, Ananthanarayanan
AU  - Krishnamoorthy A
AUID- ORCID: 0000-0002-4079-4576
AD  - Organic and Perovskite Photovoltaics Laboratory (OPPV), Department of Chemistry, 
      SRM Institute of Science and Technology, Kattankulathur, Tamil Nadu, 603203, 
      India. ananthak@srmist.edu.in.
LA  - eng
PT  - Journal Article
DEP - 20240102
PL  - England
TA  - Dalton Trans
JT  - Dalton transactions (Cambridge, England : 2003)
JID - 101176026
SB  - IM
EDAT- 2023/12/13 00:42
MHDA- 2023/12/13 00:43
CRDT- 2023/12/12 21:27
PHST- 2023/12/13 00:43 [medline]
PHST- 2023/12/13 00:42 [pubmed]
PHST- 2023/12/12 21:27 [entrez]
AID - 10.1039/d3dt03012a [doi]
PST - epublish
SO  - Dalton Trans. 2024 Jan 2;53(2):781-797. doi: 10.1039/d3dt03012a.