PMID- 38235082 OWN - NLM STAT- PubMed-not-MEDLINE LR - 20240119 IS - 2516-0230 (Electronic) IS - 2516-0230 (Linking) VI - 6 IP - 2 DP - 2024 Jan 16 TI - Future prospects of MXenes: synthesis, functionalization, properties, and application in field effect transistors. PG - 367-385 LID - 10.1039/d3na00874f [doi] AB - MXenes are a family of two-dimensional (2D) materials that have drawn a lot of interest recently because of their distinctive characteristics and possible uses in a variety of industries. This review emphasizes the bright future prospects of MXene materials in the realm of FETs. Their remarkable properties, coupled with their tunability and compatibility, position MXenes as promising candidates for the development of high-performance electronic devices. As research in this field continues to evolve, the potential of MXenes to drive innovation in electronics becomes increasingly evident, fostering excitement for their role in shaping the future of electronic technology. This paper presents a comprehensive overview of MXene materials, focusing on their synthesis methods, functionalization strategies, intrinsic properties, and their promising application in Field Effect Transistors (FETs). CI - This journal is (c) The Royal Society of Chemistry. FAU - Rahman, Maisha AU - Rahman M AD - Chemistry Discipline, Khulna University Khulna-9208 Bangladesh s.mamun@chem.ku.ac.bd. FAU - Al Mamun, Muhammad Shamim AU - Al Mamun MS AUID- ORCID: 0000-0002-9618-2931 AD - Chemistry Discipline, Khulna University Khulna-9208 Bangladesh s.mamun@chem.ku.ac.bd. LA - eng PT - Journal Article PT - Review DEP - 20231211 PL - England TA - Nanoscale Adv JT - Nanoscale advances JID - 101738708 PMC - PMC10790980 COIS- Authors declare no conflict of interest. EDAT- 2024/01/18 06:42 MHDA- 2024/01/18 06:43 PMCR- 2023/12/11 CRDT- 2024/01/18 04:18 PHST- 2023/10/11 00:00 [received] PHST- 2023/12/11 00:00 [accepted] PHST- 2024/01/18 06:43 [medline] PHST- 2024/01/18 06:42 [pubmed] PHST- 2024/01/18 04:18 [entrez] PHST- 2023/12/11 00:00 [pmc-release] AID - d3na00874f [pii] AID - 10.1039/d3na00874f [doi] PST - epublish SO - Nanoscale Adv. 2023 Dec 11;6(2):367-385. doi: 10.1039/d3na00874f. eCollection 2024 Jan 16.