PMID- 38258177
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20240129
IS  - 2072-666X (Print)
IS  - 2072-666X (Electronic)
IS  - 2072-666X (Linking)
VI  - 15
IP  - 1
DP  - 2023 Dec 27
TI  - Optimization of Gate-Head-Top/Bottom Lengths of AlGaN/GaN High-Electron-Mobility 
      Transistors with a Gate-Recessed Structure for High-Power Operations: A 
      Simulation Study.
LID - 10.3390/mi15010057 [doi]
LID - 57
AB  - In this study, we propose an optimized AlGaN/GaN high-electron-mobility 
      transistor (HEMT) with a considerably improved breakdown voltage. First, we 
      matched the simulated data obtained from a basic T-gate HEMT with the measured 
      data obtained from the fabricated device to ensure the reliability of the 
      simulation. Thereafter, to improve the breakdown voltage, we suggested applying a 
      gate-head extended structure. The gate-head-top and gate-head-bottom lengths of 
      the basic T-gate HEMT were symmetrically extended by 0.2 mum steps up to 1.0 mum. 
      The breakdown voltage of the 1.0 mum extended structure was 52% higher than that 
      of the basic T-gate HEMT. However, the cutoff frequency (fT) and maximum 
      frequency (fmax) degraded. To minimize the degradation of fT and fmax, we 
      additionally introduced a gate-recessed structure to the 1.0 mum gate-head 
      extended HEMT. The thickness of the 25 nm AlGaN barrier layer was thinned down to 
      13 nm in 3 nm steps, and the highest fT and fmax were obtained at a 6 nm recessed 
      structure. The fT and fmax of the gate-recessed structure improved by 9% and 28%, 
      respectively, with respect to those of the non-gate-recessed structure, and 
      further improvement of the breakdown voltage by 35% was observed. Consequently, 
      considering the trade-off relationship between the DC and RF characteristics, the 
      1.0 mum gate-head extended HEMT with the 6 nm gate-recessed structure was found to 
      be the optimized AlGaN/GaN HEMT for high-power operations.
FAU - Kang, Woo-Seok
AU  - Kang WS
AD  - Division of Electronics and Electrical Engineering, Dongguk University-Seoul, 
      Seoul 04620, Republic of Korea.
FAU - Choi, Jun-Hyeok
AU  - Choi JH
AD  - Division of Electronics and Electrical Engineering, Dongguk University-Seoul, 
      Seoul 04620, Republic of Korea.
FAU - Kim, Dohyung
AU  - Kim D
AD  - Division of Electronics and Electrical Engineering, Dongguk University-Seoul, 
      Seoul 04620, Republic of Korea.
FAU - Kim, Ji-Hun
AU  - Kim JH
AD  - Division of Electronics and Electrical Engineering, Dongguk University-Seoul, 
      Seoul 04620, Republic of Korea.
FAU - Lee, Jun-Ho
AU  - Lee JH
AD  - Division of Electronics and Electrical Engineering, Dongguk University-Seoul, 
      Seoul 04620, Republic of Korea.
FAU - Min, Byoung-Gue
AU  - Min BG
AD  - Electronics and Telecommunications Research Institute, Daejeon 34129, Republic of 
      Korea.
FAU - Kang, Dong Min
AU  - Kang DM
AD  - Electronics and Telecommunications Research Institute, Daejeon 34129, Republic of 
      Korea.
FAU - Choi, Jung Han
AU  - Choi JH
AD  - Photonic Components Department, Fraunhofer Heinrich-Hertz Institute, Einsteinufer 
      37, 10587 Berlin, Germany.
FAU - Kim, Hyun-Seok
AU  - Kim HS
AUID- ORCID: 0000-0003-1127-5766
AD  - Division of Electronics and Electrical Engineering, Dongguk University-Seoul, 
      Seoul 04620, Republic of Korea.
LA  - eng
GR  - 2021-0-00760/Institute of Information and Communications Technology Planning and 
      Evaluation/
GR  - P0017307/Korea Institute for Advancement of Technology/
PT  - Journal Article
DEP - 20231227
PL  - Switzerland
TA  - Micromachines (Basel)
JT  - Micromachines
JID - 101640903
PMC - PMC10821524
OTO - NOTNLM
OT  - breakdown voltage
OT  - gallium nitride
OT  - gate-head
OT  - gate-recessed
OT  - high-electron-mobility transistor
COIS- The authors declare no conflicts of interest.
EDAT- 2024/01/23 06:43
MHDA- 2024/01/23 06:44
PMCR- 2023/12/27
CRDT- 2024/01/23 01:25
PHST- 2023/12/02 00:00 [received]
PHST- 2023/12/22 00:00 [revised]
PHST- 2023/12/26 00:00 [accepted]
PHST- 2024/01/23 06:44 [medline]
PHST- 2024/01/23 06:43 [pubmed]
PHST- 2024/01/23 01:25 [entrez]
PHST- 2023/12/27 00:00 [pmc-release]
AID - mi15010057 [pii]
AID - micromachines-15-00057 [pii]
AID - 10.3390/mi15010057 [doi]
PST - epublish
SO  - Micromachines (Basel). 2023 Dec 27;15(1):57. doi: 10.3390/mi15010057.