PMID- 38258220
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20240129
IS  - 2072-666X (Print)
IS  - 2072-666X (Electronic)
IS  - 2072-666X (Linking)
VI  - 15
IP  - 1
DP  - 2024 Jan 5
TI  - A Comparative Study on the Degradation Behaviors of Ferroelectric Gate GaN HEMT 
      with PZT and PZT/Al(2)O(3) Gate Stacks.
LID - 10.3390/mi15010101 [doi]
LID - 101
AB  - In this paper, the degradation behaviors of the ferroelectric gate Gallium 
      nitride (GaN) high electron mobility transistor (HEMT) under positive gate bias 
      stress are discussed. Devices with a gate dielectric that consists of pure 
      Pb(Zr,Ti)O(3) (PZT) and a composite PZT/Al(2)O(3) bilayer are studied. Two 
      different mechanisms, charge trapping and generation of traps, both contribute to 
      the degradation. We have observed positive threshold voltage shift in both kinds 
      of devices under positive gate bias stress. In the devices with a PZT gate oxide, 
      we have found the degradation is owing to electron trapping in pre-existing oxide 
      traps. However, the degradation is caused by electron trapping in pre-existing 
      oxide traps and the generation of traps for the devices with a composite 
      PZT/Al(2)O(3) gate oxide. Owing to the large difference in dielectric constants 
      between PZT and Al(2)O(3), the strong electric field in the Al(2)O(3) interlayer 
      makes PZT/Al(2)O(3) GaN HEMT easier to degrade. In addition, the ferroelectricity 
      in PZT enhances the electric field in Al(2)O(3) interlayer and leads to more 
      severe degradation. According to this study, it is worth noting that the 
      reliability problem of the ferroelectric gate GaN HEMT may be more severe than 
      the conventional metal-insulator-semiconductor HEMT (MIS-HEMT).
FAU - Chen, Lixiang
AU  - Chen L
AD  - School of Electronic and Information Engineering, Suzhou University of Science 
      and Technology, Suzhou 215009, China.
FAU - Lu, Zhiqi
AU  - Lu Z
AD  - School of Electronic and Information Engineering, Suzhou University of Science 
      and Technology, Suzhou 215009, China.
FAU - Fu, Chaowei
AU  - Fu C
AD  - School of Electronic and Information Engineering, Suzhou University of Science 
      and Technology, Suzhou 215009, China.
FAU - Bi, Ziqiang
AU  - Bi Z
AUID- ORCID: 0000-0003-0852-0863
AD  - School of Electronic and Information Engineering, Suzhou University of Science 
      and Technology, Suzhou 215009, China.
FAU - Que, Miaoling
AU  - Que M
AD  - School of Electronic and Information Engineering, Suzhou University of Science 
      and Technology, Suzhou 215009, China.
FAU - Sun, Jiawei
AU  - Sun J
AD  - School of Electronic and Information Engineering, Suzhou University of Science 
      and Technology, Suzhou 215009, China.
FAU - Sun, Yunfei
AU  - Sun Y
AD  - School of Electronic and Information Engineering, Suzhou University of Science 
      and Technology, Suzhou 215009, China.
LA  - eng
GR  - 62104167, 62101374/National Natural Science Foundation of China/
GR  - BK20210863, BK20210861, BK20221385/Jiangsu Natural Science Foundation/
PT  - Journal Article
DEP - 20240105
PL  - Switzerland
TA  - Micromachines (Basel)
JT  - Micromachines
JID - 101640903
PMC - PMC10820974
OTO - NOTNLM
OT  - GaN
OT  - MIS-HEMT
OT  - ferroelectric
OT  - reliability
OT  - traps
COIS- The authors declare no conflicts of interest.
EDAT- 2024/01/23 06:44
MHDA- 2024/01/23 06:45
PMCR- 2024/01/05
CRDT- 2024/01/23 01:25
PHST- 2023/11/30 00:00 [received]
PHST- 2023/12/26 00:00 [revised]
PHST- 2024/01/04 00:00 [accepted]
PHST- 2024/01/23 06:45 [medline]
PHST- 2024/01/23 06:44 [pubmed]
PHST- 2024/01/23 01:25 [entrez]
PHST- 2024/01/05 00:00 [pmc-release]
AID - mi15010101 [pii]
AID - micromachines-15-00101 [pii]
AID - 10.3390/mi15010101 [doi]
PST - epublish
SO  - Micromachines (Basel). 2024 Jan 5;15(1):101. doi: 10.3390/mi15010101.