PMID- 38360529
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20240229
IS  - 1944-8252 (Electronic)
IS  - 1944-8244 (Linking)
VI  - 16
IP  - 8
DP  - 2024 Feb 28
TI  - Controlled Preparation of High Quality Bubble-Free and Uniform Conducting 
      Interfaces of Vertical van der Waals Heterostructures of Arrays.
PG  - 10877-10885
LID - 10.1021/acsami.3c16128 [doi]
AB  - Sharp and clean interfaces of van der Waals (vdW) heterostructures are highly 
      demanded in two-dimensional (2D) materials-based devices. However, current 
      assembly methods usually cause interfacial bubbles and wrinkles, hindering 
      carrier interlayer transport. The preparation of a large-scale vdW 
      heterostructure with a bubble-free interface is still a challenge. Although many 
      efforts have been made to eliminate bubbles, the evolution processes of the 
      interfacial bubbles are rarely studied. Here, the interface bubble formation and 
      evolution of the transferred 2D materials and their vdW heterostructure are 
      systemically studied by the atomic force microscopy (AFM) technique and 
      high-resolution surface current mapping. A thermal annealing procedure is 
      developed to reduce the number of bubbles and to improve the quality of 
      interfaces. In addition, influences of the interface residues and nanosteps on 
      bubble evolution are also discussed. Further, we develop the polystyrene 
      (PS)-mediated polydimethylsiloxane (PDMS) transfer technique to realize the 
      high-quality transfer of heterostructure arrays. Finally, high-resolution surface 
      current mapping results confirm that we can now produce highly uniform electrical 
      conduction interfaces of heterojunctions. This study provides guidance for 
      assembling high quality interfaces and paves the way for production of 
      bubble-free heterostructure-based electronic devices with high performance and 
      good uniformity.
FAU - Chen, Jianwei
AU  - Chen J
AD  - State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong 
      Province Key Laboratory of Display Material and Technology, School of Electronics 
      and Information Technology, Sun Yat-sen University, Guangzhou 510275, China.
FAU - Liu, Liwei
AU  - Liu L
AD  - Frontier Institute of Chip and System, Fudan University, Shanghai 200433, China.
FAU - Chen, Huanjun
AU  - Chen H
AUID- ORCID: 0000-0003-4699-009X
AD  - State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong 
      Province Key Laboratory of Display Material and Technology, School of Electronics 
      and Information Technology, Sun Yat-sen University, Guangzhou 510275, China.
FAU - Xu, Ningsheng
AU  - Xu N
AD  - State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong 
      Province Key Laboratory of Display Material and Technology, School of Electronics 
      and Information Technology, Sun Yat-sen University, Guangzhou 510275, China.
FAU - Deng, Shaozhi
AU  - Deng S
AUID- ORCID: 0000-0003-1830-2026
AD  - State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong 
      Province Key Laboratory of Display Material and Technology, School of Electronics 
      and Information Technology, Sun Yat-sen University, Guangzhou 510275, China.
LA  - eng
PT  - Journal Article
DEP - 20240215
PL  - United States
TA  - ACS Appl Mater Interfaces
JT  - ACS applied materials & interfaces
JID - 101504991
SB  - IM
OTO - NOTNLM
OT  - adhesion force
OT  - array of van der Waals heterostructure
OT  - atomic force microscopy
OT  - bubble-free interface
OT  - surface current mapping
EDAT- 2024/02/16 00:43
MHDA- 2024/02/16 00:44
CRDT- 2024/02/15 23:31
PHST- 2024/02/16 00:44 [medline]
PHST- 2024/02/16 00:43 [pubmed]
PHST- 2024/02/15 23:31 [entrez]
AID - 10.1021/acsami.3c16128 [doi]
PST - ppublish
SO  - ACS Appl Mater Interfaces. 2024 Feb 28;16(8):10877-10885. doi: 
      10.1021/acsami.3c16128. Epub 2024 Feb 15.