PMID- 38400244
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20240227
IS  - 1424-8220 (Electronic)
IS  - 1424-8220 (Linking)
VI  - 24
IP  - 4
DP  - 2024 Feb 7
TI  - A 28 GHz GaN 6-Bit Phase Shifter MMIC with Continuous Tuning Calibration 
      Technique.
LID - 10.3390/s24041087 [doi]
LID - 1087
AB  - A 28 GHz digitally controlled 6-bit phase shifter with a precision calibration 
      technique in GaN high-electron mobility transistor (HEMT) technology is presented 
      for Ka-band phased-array systems and applications. It comprises six stages, in 
      which stages 1 and 2 for 5.625 degrees  and 11.25 degrees  are designed in the form of a 
      switched-line circuit, and stages 3, 4, and 5 for 22.5 degrees , 45 degrees , and 90 degrees  are 
      designed in the form of a switched-filter circuit. The final stage 6 for 180 degrees  is 
      designed in a single-to-differential balun followed by a single-pole double-throw 
      (SPDT) switch for achieving an efficient phase inversion. A novel continuous 
      tuning calibration technique is proposed to improve the phase accuracy. It 
      controls the gate bias voltage of off-state HEMTs at the stage 6 SPDT switch for 
      fine calibration of the output phase. Fabricated in a 0.15 mum GaN HEMT process 
      using a die size of 1.75 mm(2), the circuit produces 64 phase states at 28 GHz 
      with a 5.625 degrees  step. The experimental results show that the Root-Mean-Square (RMS) 
      phase error is significantly improved from 8.56 degrees  before calibration to 1.08 degrees  
      after calibration. It is also found that the calibration does not induce 
      significant changes for other performances such as the insertion loss, RMS 
      amplitude error, and input-referred P(1dB). This work successfully demonstrates 
      that the GaN technology can be applied to millimeter-wave high-power phased-array 
      transceiver systems.
FAU - Seo, Soyeon
AU  - Seo S
AD  - Department of Electronic Convergence Engineering, Kwangwoon University, Seoul 
      01897, Republic of Korea.
FAU - Lee, Jinho
AU  - Lee J
AD  - Now with Samsung Electronics Co., Suwon 16677, Republic of Korea.
FAU - Lee, Yongho
AU  - Lee Y
AUID- ORCID: 0009-0007-0276-9904
AD  - Department of Electronic Convergence Engineering, Kwangwoon University, Seoul 
      01897, Republic of Korea.
FAU - Shin, Hyunchol
AU  - Shin H
AUID- ORCID: 0000-0003-1141-3428
AD  - Department of Electronic Convergence Engineering, Kwangwoon University, Seoul 
      01897, Republic of Korea.
LA  - eng
GR  - 2020R1A2C1008484/National Research Foundation of Korea/
GR  - Research Grant 2022/Kwangwoon University/
PT  - Journal Article
DEP - 20240207
PL  - Switzerland
TA  - Sensors (Basel)
JT  - Sensors (Basel, Switzerland)
JID - 101204366
SB  - IM
PMC - PMC10893036
OTO - NOTNLM
OT  - 28 GHz
OT  - gallium nitride (GaN)
OT  - high electron mobility transistor (HEMT)
OT  - phase calibration technique
OT  - phase shifter
COIS- Jinho Lee is employed by Samsung Electronics Company. The remaining authors 
      declare that the research was conducted in the absence of any commercial or 
      financial relationships that could be construed as a potential conflict of 
      interest.
EDAT- 2024/02/24 11:45
MHDA- 2024/02/24 11:46
PMCR- 2024/02/07
CRDT- 2024/02/24 01:23
PHST- 2024/01/11 00:00 [received]
PHST- 2024/01/24 00:00 [revised]
PHST- 2024/02/06 00:00 [accepted]
PHST- 2024/02/24 11:46 [medline]
PHST- 2024/02/24 11:45 [pubmed]
PHST- 2024/02/24 01:23 [entrez]
PHST- 2024/02/07 00:00 [pmc-release]
AID - s24041087 [pii]
AID - sensors-24-01087 [pii]
AID - 10.3390/s24041087 [doi]
PST - epublish
SO  - Sensors (Basel). 2024 Feb 7;24(4):1087. doi: 10.3390/s24041087.