PMID- 38456534
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20240308
IS  - 1089-7690 (Electronic)
IS  - 0021-9606 (Linking)
VI  - 160
IP  - 10
DP  - 2024 Mar 14
TI  - Reducing contact resistance of MoS2-based field effect transistors through 
      uniform interlayer insertion via atomic layer deposition.
LID - 104701 [pii]
LID - 10.1063/5.0196668 [doi]
AB  - Molybdenum disulfide (MoS2), a semiconducting two-dimensional layered transition 
      metal dichalcogenide (2D TMDC), with attractive properties enables the opening of 
      a new electronics era beyond Si. However, the notoriously high contact resistance 
      (RC) regardless of the electrode metal has been a major challenge in the 
      practical applications of MoS2-based electronics. Moreover, it is difficult to 
      lower RC because the conventional doping technique is unsuitable for MoS2 due to 
      its ultrathin nature. Therefore, the metal-insulator-semiconductor (MIS) 
      architecture has been proposed as a method to fabricate a reliable and stable 
      contact with low RC. Herein, we introduce a strategy to fabricate MIS contact 
      based on atomic layer deposition (ALD) to dramatically reduce the RC of 
      single-layer MoS2 field effect transistors (FETs). We utilize ALD Al2O3 as an 
      interlayer for the MIS contact of bottom-gated MoS2 FETs. Based on the Langmuir 
      isotherm, the uniformity of ALD Al2O3 films on MoS2 can be increased by 
      modulating the precursor injection pressures even at low temperatures of 150  degrees C. 
      We discovered, for the first time, that film uniformity critically affects RC 
      without altering the film thickness. Additionally, we can add functionality to 
      the uniform interlayer by adopting isopropyl alcohol (IPA) as an oxidant. 
      Tunneling resistance across the MIS contact is lowered by n-type doping of MoS2 
      induced by IPA as the oxidant in the ALD process. Through a highly uniform 
      interlayer combined with strong doping, the contact resistance is improved by 
      more than two orders of magnitude compared to that of other MoS2 FETs fabricated 
      in this study.
CI  - (c) 2024 Author(s). Published under an exclusive license by AIP Publishing.
FAU - Woo, Whang Je
AU  - Woo WJ
AUID- ORCID: 0000-0002-8729-0260
AD  - School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-Ro, 
      Seodaemun-Gu, Seoul 120-749, Republic of Korea.
FAU - Seo, Seunggi
AU  - Seo S
AUID- ORCID: 0000-0002-1559-2286
AD  - School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-Ro, 
      Seodaemun-Gu, Seoul 120-749, Republic of Korea.
AD  - Department of Chemical Engineering, Stanford University, Stanford, California 
      94305, USA.
FAU - Yoon, Hwi
AU  - Yoon H
AUID- ORCID: 0000-0003-1558-024X
AD  - School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-Ro, 
      Seodaemun-Gu, Seoul 120-749, Republic of Korea.
FAU - Lee, Sanghun
AU  - Lee S
AUID- ORCID: 0009-0007-3683-7098
AD  - School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-Ro, 
      Seodaemun-Gu, Seoul 120-749, Republic of Korea.
FAU - Kim, Donghyun
AU  - Kim D
AD  - School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-Ro, 
      Seodaemun-Gu, Seoul 120-749, Republic of Korea.
FAU - Park, Seonyeong
AU  - Park S
AUID- ORCID: 0000-0002-3954-692X
AD  - School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-Ro, 
      Seodaemun-Gu, Seoul 120-749, Republic of Korea.
FAU - Kim, Youngjun
AU  - Kim Y
AD  - School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-Ro, 
      Seodaemun-Gu, Seoul 120-749, Republic of Korea.
FAU - Sohn, Inkyu
AU  - Sohn I
AUID- ORCID: 0000-0002-6962-3893
AD  - School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-Ro, 
      Seodaemun-Gu, Seoul 120-749, Republic of Korea.
FAU - Park, JuSang
AU  - Park J
AD  - Advanced Institute of Convergence Technology, Seoul National University, Suwon 
      16229, Republic of Korea.
FAU - Chung, Seung-Min
AU  - Chung SM
AUID- ORCID: 0000-0002-4985-8097
AD  - School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-Ro, 
      Seodaemun-Gu, Seoul 120-749, Republic of Korea.
FAU - Kim, Hyungjun
AU  - Kim H
AUID- ORCID: 0000-0001-5393-2053
AD  - School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-Ro, 
      Seodaemun-Gu, Seoul 120-749, Republic of Korea.
LA  - eng
PT  - Journal Article
PL  - United States
TA  - J Chem Phys
JT  - The Journal of chemical physics
JID - 0375360
SB  - IM
EDAT- 2024/03/08 12:41
MHDA- 2024/03/08 12:42
CRDT- 2024/03/08 08:05
PHST- 2024/01/08 00:00 [received]
PHST- 2024/02/15 00:00 [accepted]
PHST- 2024/03/08 12:42 [medline]
PHST- 2024/03/08 12:41 [pubmed]
PHST- 2024/03/08 08:05 [entrez]
AID - 3270193 [pii]
AID - 10.1063/5.0196668 [doi]
PST - ppublish
SO  - J Chem Phys. 2024 Mar 14;160(10):104701. doi: 10.1063/5.0196668.