PMID- 38477696
OWN - NLM
STAT- Publisher
LR  - 20240313
IS  - 1613-6829 (Electronic)
IS  - 1613-6810 (Linking)
DP  - 2024 Mar 13
TI  - Bio-Inspired Photosensory Artificial Synapse Based on Functionalized Tellurium 
      Multiropes for Neuromorphic Computing.
PG  - e2310013
LID - 10.1002/smll.202310013 [doi]
AB  - Nanomaterials like graphene and transition metal dichalcogenides are being 
      explored for developing artificial photosensory synapses with low-power optical 
      plasticity and high retention time for practical nervous system implementation. 
      However, few studies are conducted on Tellurium (Te)-based nanomaterials due to 
      their direct and small bandgaps. This paper reports the superior photo-synaptic 
      properties of covalently bonded Tellurium sulfur oxide (TeSO(x) ) and Tellurium 
      selenium oxide (TeSeO(x) )nanomaterials, which are fabricated by incorporating S 
      and Se atoms on the surface of Te multiropes using vapor deposition. Unlike pure 
      Te multiropes, the TeSO(x) and TeSeO(x) multiropes exhibit controllable temporal 
      dynamics under optical stimulation. For example, the TeSO(x) multirope-based 
      transistor displays a photosensory synaptic response to UV light (lambda = 365 nm). 
      Furthermore, the TeSeO(x) multirope-based transistor exhibits photosensory 
      synaptic responses to UV-vis light (lambda = 365, 565, and 660 nm), reliable 
      electrical performance, and a combination of both photodetector and optical 
      artificial synaptic properties with a maximum responsivity of 1500 AW(-1) to 
      365 nm UV light. This result is among the highest reported for 
      Te-heterostructure-based devices, enabling optical artificial synaptic 
      applications with low voltage spikes (1 V) and low light intensity (21 microW cm(-2) 
      ), potentially useful for optical neuromorphic computing.
CI  - (c) 2024 Wiley-VCH GmbH.
FAU - Rani, Adila
AU  - Rani A
AD  - Electrical Engineering, Korea University, Anam-ro 145, Seongbuk-gu, Seoul, 02841, 
      Republic of Korea.
FAU - Sultan, M Junaid
AU  - Sultan MJ
AD  - School of Advanced Materials Science & Engineering, Sungkyunkwan University, 
      Suwon, Gyeonggi-do, 16419, Republic of Korea.
FAU - Ren, Wanqi
AU  - Ren W
AD  - Electrical Engineering, Korea University, Anam-ro 145, Seongbuk-gu, Seoul, 02841, 
      Republic of Korea.
FAU - Bag, Atanu
AU  - Bag A
AD  - School of Advanced Materials Science & Engineering, Sungkyunkwan University, 
      Suwon, Gyeonggi-do, 16419, Republic of Korea.
FAU - Lee, Ho Jin
AU  - Lee HJ
AD  - Electrical Engineering, Korea University, Anam-ro 145, Seongbuk-gu, Seoul, 02841, 
      Republic of Korea.
FAU - Lee, Nae-Eung
AU  - Lee NE
AD  - School of Advanced Materials Science & Engineering, Sungkyunkwan University, 
      Suwon, Gyeonggi-do, 16419, Republic of Korea.
FAU - Kim, Tae Geun
AU  - Kim TG
AUID- ORCID: 0000-0001-6211-1134
AD  - Electrical Engineering, Korea University, Anam-ro 145, Seongbuk-gu, Seoul, 02841, 
      Republic of Korea.
LA  - eng
GR  - 2016R1A3B1908249/National Research Foundation of Korea/
GR  - 2020R1A2C3013480/National Research Foundation of Korea/
PT  - Journal Article
DEP - 20240313
PL  - Germany
TA  - Small
JT  - Small (Weinheim an der Bergstrasse, Germany)
JID - 101235338
SB  - IM
OTO - NOTNLM
OT  - Te multiropes
OT  - defected TeSOx and TeSeOx structure
OT  - photo-synaptic devices
EDAT- 2024/03/13 12:48
MHDA- 2024/03/13 12:48
CRDT- 2024/03/13 10:14
PHST- 2024/02/07 00:00 [revised]
PHST- 2023/11/03 00:00 [received]
PHST- 2024/03/13 12:48 [medline]
PHST- 2024/03/13 12:48 [pubmed]
PHST- 2024/03/13 10:14 [entrez]
AID - 10.1002/smll.202310013 [doi]
PST - aheadofprint
SO  - Small. 2024 Mar 13:e2310013. doi: 10.1002/smll.202310013.