PMID- 38542577
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20240330
IS  - 2072-666X (Print)
IS  - 2072-666X (Electronic)
IS  - 2072-666X (Linking)
VI  - 15
IP  - 3
DP  - 2024 Feb 28
TI  - Review of the AlGaN/GaN High-Electron-Mobility Transistor-Based Biosensors: 
      Structure, Mechanisms, and Applications.
LID - 10.3390/mi15030330 [doi]
LID - 330
AB  - Due to its excellent material performance, the AlGaN/GaN high-electron-mobility 
      transistor (HEMT) provides a wide platform for biosensing. The high density and 
      mobility of two-dimensional electron gas (2DEG) at the AlGaN/GaN interface 
      induced by the polarization effect and the short distance between the 2DEG 
      channel and the surface can improve the sensitivity of the biosensors. The high 
      thermal and chemical stability can also benefit HEMT-based biosensors' operation 
      under, for example, high temperatures and chemically harsh environments. This 
      makes creating biosensors with excellent sensitivity, selectivity, reliability, 
      and repeatability achievable using commercialized semiconductor materials. To 
      synthesize the recent developments and advantages in this research field, we 
      review the various AlGaN/GaN HEMT-based biosensors' structures, operations 
      mechanisms, and applications. This review will help new researchers to learn the 
      basic information about the topic and aid in the development of next-generation 
      of AlGaN/GaN HEMT-based biosensors.
FAU - Li, Chenbi
AU  - Li C
AD  - Department of ICU, 3201 Hospital, Hanzhong 723000, China.
FAU - Chen, Xinghuan
AU  - Chen X
AUID- ORCID: 0000-0002-8294-1730
AD  - The China Electronic Product Reliability and Environmental Testing Research 
      Institute, Guangzhou 510610, China.
FAU - Wang, Zeheng
AU  - Wang Z
AUID- ORCID: 0000-0002-6994-1234
AD  - Manufacturing, CSIRO, Lindfield, NSW 2070, Australia.
LA  - eng
PT  - Journal Article
PT  - Review
DEP - 20240228
PL  - Switzerland
TA  - Micromachines (Basel)
JT  - Micromachines
JID - 101640903
PMC - PMC10972248
OTO - NOTNLM
OT  - AlGaN/GaN
OT  - HEMT
OT  - biomolecule
OT  - biosensor
OT  - medical sensor
COIS- The authors declare no conflict of interest.
EDAT- 2024/03/28 06:45
MHDA- 2024/03/28 06:46
PMCR- 2024/02/28
CRDT- 2024/03/28 01:20
PHST- 2024/01/18 00:00 [received]
PHST- 2024/02/15 00:00 [revised]
PHST- 2024/02/26 00:00 [accepted]
PHST- 2024/03/28 06:46 [medline]
PHST- 2024/03/28 06:45 [pubmed]
PHST- 2024/03/28 01:20 [entrez]
PHST- 2024/02/28 00:00 [pmc-release]
AID - mi15030330 [pii]
AID - micromachines-15-00330 [pii]
AID - 10.3390/mi15030330 [doi]
PST - epublish
SO  - Micromachines (Basel). 2024 Feb 28;15(3):330. doi: 10.3390/mi15030330.